Influence of temperature on Al/p-CuInAlSe2 thin-film Schottky diodes

Parihar, Usha; Ray, Jaymin; Panchal, C. J.; Padha, Naresh

doi:10.1007/s00339-016-0105-9

Cited by 12 publications

(8 citation statements)

References 22 publications

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“…It is attributed to the decrease in the strain and dislocation density with the increase in the crystalline size. As the crystal grows, the grain boundaries are relaxed and eliminated which lead to the rearrangement of atoms in such a way that strain energy decreases [35,36].…”

Section: Optical Characterizationmentioning

confidence: 99%

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

et al. 2016

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Ruddlesden-Popper Ba 3 Zr 2 O 7 thin films have been synthesized via pulsed laser deposition (PLD) technique. The optimization of deposition parameters in PLD enables the formation of thin film of metastable Ba 3 Zr 2 O 7 phase from BaZrO 3 target. In order to see the post-annealing effects on the structural and optical properties, the deposited Ba 3 Zr 2 O 7 thin films were annealed at 500, 600 and 800°C. X-ray diffraction (XRD) reveals the formation of Ba 3 Zr 2 O 7 phase with tetragonal structure. The changes in the surface of the deposited films were analysed by FE-SEM and AFM. The thin film post-annealed at 500°C exhibited the best structural, optical and surface properties. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Zr and O exist mainly in the form of Ba 3 Zr 2 O 7 Ruddlesden-Popper-type perovskite structure.

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Section: Optical Characterizationmentioning

confidence: 99%

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

et al. 2016

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“…These morphological and structural inhomogeneities incorporate a low and high barrier along with the MS interface. At low temperature the current through the lower barriers lies in the applied potential distribution [60,69,70]. Authors in [64] showed that the Richardson constant calculated from the J-V-T characteristics depends strictly on the barrier inhomogeneities.…”

Section: A Forward-bias J-v-t Characteristics Of a /P-cis/sno 2 :Fmentioning

confidence: 99%

“…The modified Richardson constant was ‫ܣ‬ * * ൌ 120 AK ିଶ cm ିଶ and mean BH of 1.29eV. Authors in [70] used the same method for Al/p-CuInAlSe 2 SD and obtained a modified Richardson constant of ‫ܣ‬ * * ൌ 26 AK ିଶ cm ିଶ and a mean barrier height of 1.02eV. deposition system and spray pyrolysis were measured in the 200K-340K temperature range.…”

Section: The Modified Richardson Plotsmentioning

confidence: 99%

“…From the modified Richardson plot, the modified Richardson constant for CIS is ‫ܣ‬ * * = 120 AK ିଶ cm ିଶ with a mean barrier height of 1.29eV. ‫ܣ‬ * * has shown a strong dependence on the metalsemiconductor contact quality, saturation current, and probably temperature as shown in [62,68,70]. In determining ‫ܣ‬ * * , barrier inhomogeneities should be considered to get an accurate value.…”

Section: The Modified Richardson Plotsmentioning

confidence: 99%

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Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

Nasrallah

Mahboub

Jemai³

et al. 2019

Eng. Technol. Appl. Sci. Res.

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In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of 200-340K. These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic variables of the Al/p-CuInS2/SnO2:F junctions, such as the current density, the serial resistance, the parallel conductance, the Schottky barrier height (SBH), and the ideality factor of the SD were obtained by fitting the J-V-T data using the Lambert function. Data analysis was conducted with the use of MATLAB. Results showed that n is greater than 1, which could be explained by the existence of inhomogeneities due to the grain boundaries in CuInS2. Through this analysis, one can see a good agreement between experimental and modeled data. The study has shown that the main contribution in the current conduction in such heterostructures is the thermionic emission (TE) supported by the recombination of the carriers. The last phenomenon appears mainly in the grain boundaries, which contain both intrinsic and extrinsic defects (secondary phases, segregated oxygen). An investigation of the J-V-T characteristics according to TE theory has demonstrated that the current density and the SBH increase while serial resistance, parallel conductance decrease with an increase in temperature. After an SBH inhomogeneity correction, the modified Richardson constant and the mean barrier height were found to be 120AK-2cm-2 and 1.29eV respectively. This kind of behavior has been observed in many metal-semiconductor contacts.

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“…Further, an ideality factor higher than 2 at low temperature is found. The high ideality factor is related to the effect of inhomogeneities at a real MS interface , and also to the deviation from TE model in forward bias region. Therefore, thermionic field-emission model is proposed .…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Modeling of Ni/β-Ga₂O₃ Schottky Barrier Diode Interface

Labed

Park

Meftah

et al. 2021

ACS Appl. Electron. Mater.

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Schottky barrier diodes (SBD) are usually qualified by their figures of merit. Evolution of these figures of merit with temperature is an indication of the different conduction mechanisms involved in SBD. Figures of merit extraction at different temperatures is therefore of great importance. Thermionic emission conduction modeling of I–V characteristics is usually considered when extracting these figures of merit. However, high-ideality factor values are obtained at low temperatures because of other conduction mechanisms involved. In this work, TCAD simulation is used to model measured Ni/β-Ga2 O3 SBDs at a temperature range of 100–300 K. This modeling separates tunneling current from thermionic emission current; hence, a reasonable ideality factor of 6.04 was obtained from the total current. An ideality factor of about 1.04 was extracted from the thermionic current component only. Evolution with temperature of this combination of tunneling and thermionic emission is examined. It is concluded that, with increasing temperature, tunneling is reduced while thermionic emission is increased; thus, an ideality factor is almost independent of temperature and close to unity is obtained.

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Influence of temperature on Al/p-CuInAlSe2 thin-film Schottky diodes

Cited by 12 publications

References 22 publications

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

Low Temperature Modeling of Ni/β-Ga₂O₃ Schottky Barrier Diode Interface

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Influence of temperature on Al/p-CuInAlSe2 thin-film Schottky diodes

Cited by 12 publications

References 22 publications

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Epitaxial thin-film growth of Ruddlesden–Popper-type Ba3Zr2O7 from a BaZrO3 target by pulsed laser deposition

Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

Low Temperature Modeling of Ni/β-Ga2O3 Schottky Barrier Diode Interface

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Low Temperature Modeling of Ni/β-Ga₂O₃ Schottky Barrier Diode Interface