Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors

Parenteau, M.; Carlone, C.

doi:10.1103/physrevb.41.5227

Cited by 323 publications

(231 citation statements)

References 30 publications

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“…Georgies et al [10], Makinistian et al [19] and Parenteau et al [21] works show that the band gap of SnS is directly proportional to the unit cell's volume, with band gap approaching small values as volume decreases. Fig 8 show the results of our calculations for samples grown on ITO and glass respectively for different thicknesses.…”

Section: Structure Of Sns For Various Lattice Parametersmentioning

confidence: 97%

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

et al. 2016

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The parameters influencing the band gap of tin sulphide thin nano-crystalline films have been investigated. Both grain size and lattice parameters are known to influence the band gap. The present study initially investigates each contribution individually. The experimentally determined dependency on lattice parameter is verified by theoretical calculations. We also suggest how to treat the variation of band gap as a two variable problem. The results allow us to show dependency of effective mass (reduced) on lattice unit volume.

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Section: Structure Of Sns For Various Lattice Parametersmentioning

confidence: 97%

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

et al. 2016

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“…We adopt the axes system used by previous works [15,30,31], where layers are chosen to sit on the x-y plane ie. perpendicular to the z-direction.…”

Section: A Crystal Structurementioning

confidence: 99%

Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure

2015

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The group-IV monochalcogenides SnS, SnSe, GeS, and GeSe form a family within the wider group of semiconductor 'phosphorene analogues'. Here, we used first principles calculations to investigate systematically their structural, electronic and optical properties, analyzing the changes associated with the reduction of dimensionality, from bulk to monolayer or bilayer form. We show that all those binary phosphorene analogues are semiconducting, with bandgap energies covering part of the infra-red and visible range, and in most cases higher than phosphorene. Further, we found that they have multiple valleys in the valence and conduction band, the latter with spin-orbit splitting of the order of 19-86 meV.

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“…Parenteau and Carlone [11] measured the temperature and pressure dependence of the direct and indirect optical gaps of SnSe up to 4.0 GPa. They found its electronic properties to be three-dimensional in nature, already at ambient pressure, as opposed to the two-dimensional nature suggested by the easy cleavage of SnSe crystals, their lattice dynamics [12] and the interpretation of the chemical bonding in this compound [5].…”

Section: Earlier High-pressure Studies Of Snsementioning

confidence: 99%

Structural changes in thermoelectric SnSe at high pressures

Loa

Husband

Downie

et al. 2015

J. Phys.: Condens. Matter

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Abstract. The crystal structure of the thermoelectric material tin selenide has been investigated with angle-dispersive synchrotron x-ray powder diffraction under hydrostatic pressure up to 27 GPa. With increasing pressure, a continuous evolution of the crystal structure from the GeS type to the higher-symmetry TlI type was observed, with a critical pressure of 10.5(3) GPa. The orthorhombic high-pressure modification, β -SnSe, is closely related to the pseudo-tetragonal high-temperature modification at ambient pressure. The similarity between the changes of the crystal structure at elevated temperatures and at high pressures suggests the possibility that strained thin films of SnSe may provide a route to overcoming the problem of the limited thermal stability of β-SnSe at high temperatures.

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Influence of temperature and pressure on the electronic transitions in SnS and SnSe semiconductors

Cited by 323 publications

References 30 publications

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

Grain size and lattice parameter's influence on band gap of SnS thin nano-crystalline films

Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure

Structural changes in thermoelectric SnSe at high pressures

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