2017
DOI: 10.1088/1742-6596/872/1/012019
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Influence of technological parameters on the mechanical properties of titanium nitride films deposited by hot target reactive sputtering

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Cited by 2 publications
(4 citation statements)
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“…Hall effect measurements indicate that the as-deposited TiN film behaves as an n-type semiconductor, with a very high conductivity of 1.6 3 10 3 S.cm À1 , an ultrahigh electron concentration of 1.3 3 10 23 cm À3 , and an electron mobility of 0.15 cm 2 .V À1 .s À1 . The high conductivity of TiN films with a high electron concentration can be attributed to the existence of metallic bonding with the d electrons of titanium, as described by Solovan et al24 The X-ray diffraction (XRD) pattern of as-deposited film exhibits strongly pronounced 2q peaks at 36.7 , 42.6 , and 61.8 (see FigureS1), indicating a face-centered cubic TiN phase (PDF-01-087-0630) with a preferred orientation of (111) planes 25,26. No 2q peaks related to metallic Ti ($38.5 ) are observed.…”
mentioning
confidence: 67%
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“…Hall effect measurements indicate that the as-deposited TiN film behaves as an n-type semiconductor, with a very high conductivity of 1.6 3 10 3 S.cm À1 , an ultrahigh electron concentration of 1.3 3 10 23 cm À3 , and an electron mobility of 0.15 cm 2 .V À1 .s À1 . The high conductivity of TiN films with a high electron concentration can be attributed to the existence of metallic bonding with the d electrons of titanium, as described by Solovan et al24 The X-ray diffraction (XRD) pattern of as-deposited film exhibits strongly pronounced 2q peaks at 36.7 , 42.6 , and 61.8 (see FigureS1), indicating a face-centered cubic TiN phase (PDF-01-087-0630) with a preferred orientation of (111) planes 25,26. No 2q peaks related to metallic Ti ($38.5 ) are observed.…”
mentioning
confidence: 67%
“…The high conductivity of TiN films with a high electron concentration can be attributed to the existence of metallic bonding with the d electrons of titanium, as described by Solovan et al 24 The X-ray diffraction (XRD) pattern of as-deposited film exhibits strongly pronounced 2q peaks at 36.7 , 42.6 , and 61.8 (see Figure S1), indicating a face-centered cubic TiN phase (PDF-01-087-0630) with a preferred orientation of (111) planes. 25,26 No 2q peaks related to metallic Ti ($38. Figure 2A shows the dark J-V curves of Schottky structures at room temperature (Figure 2A inset); the structures feature a circular front contact (1.0 mm diameter) made of Al (300 nm) or a stack of TiN/Ag (300/200 nm) and a full-area Al contact (300 nm) at the rear.…”
Section: Electrical Properties Of Tin Film Deposited By Reactive Sputteringmentioning
confidence: 99%
“…For the last twenty years at Saint Petersburg Electrotechnical University (LETI, Russia), our group has been studying transition metal oxide, nitride, and oxynitride films deposited by reactive magnetron sputtering [142][143][144][145][146][147][148][149]. Initial interest in a traditional magnetron with a well-cooled metal target (cold target) made it possible to create a sputter assembly with a hot target [150][151][152][153] and then with a sandwich target [154][155][156][157][158][159]. The study of the processes that occur during film deposition using these tools inevitably led to modeling [160][161][162][163][164][165].…”
Section: Nonisothermal Physicochemical Model (The Barybin Model)mentioning
confidence: 99%
“…In recent years, the hot-target magnetron has gained increased attention among specialists [150][151][152][155][156][157][177][178][179][180][181][182]. A feature of this device is that its target can be heated to melting.…”
Section: Single Hot Target In Ar + X2mentioning
confidence: 99%