Influence of TaN films deposited using different N2 flow rates on the properties of Ta and Cu films in advanced 3D NAND memory

Sun, Xianglie; Lv, Shuliang; Li, Yuan; Huang, Chi; Ma, Haodong; Luo, Jun

doi:10.1016/j.mssp.2020.105120

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…Tantalum (Ta) films are of interest for technological applications in microelectronics industry due to excellent physical and chemical properties. [1,2] Since non-equilibrium thermodynamic growth is inherent to film deposition, magnetron sputtered Ta films can exhibit the stable BCC α-phase and metastable tetragonal β -phase, or a mixture of two phases. The α-Ta film with high hardness (8 GPa-12 GPa), high melting point (T m ≈ 3000 • C), low resistivity (15 µΩ • cm-80 µΩ•cm), and high temperature wear resistance, is the candidate material in many applications such as tool coating, barrel protective coating and Cu/Si diffusion barrier.…”

Section: Introductionmentioning

confidence: 99%

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Huang¹,

He²,

Yi³

2022

Chinese Phys. B

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Crystalline phase and microstructure control are critical for obtaining desired properties of Ta films deposited by magnetron sputtering. Structure, phase evolution, and properties of Ta films deposited by using hybrid high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) under different fractions of DCMS power where Ta ion to Ta neutral ratios of the deposition flux were changed are investigated. The results revealed that the number of Ta ions arriving on the substrate/growing film play an important role in structure and phase evolution of Ta films. It can effectively avoid the unstable arc discharge under low pressure and show a higher deposition rate by hybrid high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) compared with only high power impulse magnetron sputtering (HiPIMS). Meanwhile, the high hardness α-Ta films can be directly deposited by hybrid co-sputtering compared to those prepared by direct current magnetron sputtering (DCMS). In the co-sputtering technology, pure α-Ta phase film with extremely fine, dense and uniform crystal grains were obtained, which shows smooth surface roughness (3.22 nm), low resistivity (38.98 μΩ·cm) and abnormal high hardness (17.64 GPa).

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Section: Introductionmentioning

confidence: 99%

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Huang¹,

He²,

Yi³

2022

Chinese Phys. B

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“…In Si-LSI (LSI) and 3D-LSI, significant miniaturization of the Cu interconnect has continued to progress, [1][2][3][4][5][6] where reduction of the interconnect resistance and improvement of the electromigration (EM) resistance are strongly required. 7) Under these circumstances, the realization of Cu(111) orientation, which is the most resistant to EM, is strongly desired.…”

mentioning

confidence: 99%

Fundamental evaluation of orientation and grain size of Cu film in Cu/TaWN/SiO₂/Si system

Sato

Yasuda

Takeyama

2023

Jpn. J. Appl. Phys.

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Cu(111) preferential orientation is desired to improve the electromigration (EM) resistance in Si-large-scale integration (LSI) and 3D-LSI. In this study, we examine the orientation and grain size of a Cu film in a Cu/TaWN/SiO2/Si system by using a 5 nm-thick TaWN alloy film that functions as both a thin diffusion barrier and underlying material that induces preferential Cu(111) orientation. The Cu film with highly-oriented growth of Cu(111) and an average grain size of ~160 nm was obtained on the as-deposited TaWN(5 nm-thick)/SiO2/Si system. The Cu/TaWN/SiO2/Si system tolerates annealing at 700 °C for 60 min without any structural and/or configurational change.

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Corrosion resistance, nano-mechanical properties, and biocompatibility of Mg-plasma-implanted and plasma-etched Ta/TaN hierarchical multilayered coatings on the nitrided AZ91 Mg alloy

Shanaghi¹,

Souri

Mehrjou

et al. 2021

Biomed. Mater.

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A tantalum/tantalum nitride (Ta/TaN) multilayered coating is deposited on plasma-nitridedAZ91 Mg alloy. The top TaN layer undergoes O2 + Ar plasma etching to improve the antibacterial properties and Mg plasma immersion ion implantation (MgPIII) is performed to enhance the biocompatibility and wound healing capability. A uniform, compact, homogeneous, and columnar nanostructured MgPIII and plasma-etched TaN layer with a cluster size of about 17 nm, surface roughness of 0.28 nm, and needle morphology is observed. Although, plasma etching increases the corrosion current density (i corr) from 0.02 to 0.19 µA cm−2 due to larger surface roughness and different potentials between sharp points and smooth points, MgPIII decreases i corr from 0.19 to 0.02 µA cm−2 besides a more positive corrosion potential. The amounts of Mg+2 released to the simulated body fluid (SBF) diminishes from 89.63 ± 0.54 to 60.30 ± 0.47 mg l−1 cm−2 indicating improved corrosion resistance. Under fever conditions (40 °C), i corr decreases by 63%, but the open circuit potential does not change due to the constant chemical composition of the surface as well as thicker double layer and less defects, as confirmed by the larger amount of Mg+2 of 71.49 ± 0.22 mg l−1 cm−2 leached to the SBF. In the self-healing process which occurs via the reactions between the tantalum intermediate layer and electrolytes and penetrating ions through the defects as well as formation of oxide compounds, creation and propagation of defects are deterred as shown the 24 h destructive polarization test in SBF. The combination of plasma etching and MgPIII enhance not only the bacterial resistance and biocompatibility of the super-hard TaN layer by providing the rougher surface on TaN–P–Mg, but also the nano-mechanical properties and anticorrosion properties. As a result, the hardness increases by 7%, elastic modulus decreases by 19%, and the stiffness increases by 21%.

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Influence of TaN films deposited using different N2 flow rates on the properties of Ta and Cu films in advanced 3D NAND memory

Cited by 4 publications

References 23 publications

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Fundamental evaluation of orientation and grain size of Cu film in Cu/TaWN/SiO₂/Si system

Corrosion resistance, nano-mechanical properties, and biocompatibility of Mg-plasma-implanted and plasma-etched Ta/TaN hierarchical multilayered coatings on the nitrided AZ91 Mg alloy

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Influence of TaN films deposited using different N2 flow rates on the properties of Ta and Cu films in advanced 3D NAND memory

Cited by 4 publications

References 23 publications

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering

Fundamental evaluation of orientation and grain size of Cu film in Cu/TaWN/SiO2/Si system

Corrosion resistance, nano-mechanical properties, and biocompatibility of Mg-plasma-implanted and plasma-etched Ta/TaN hierarchical multilayered coatings on the nitrided AZ91 Mg alloy

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Fundamental evaluation of orientation and grain size of Cu film in Cu/TaWN/SiO₂/Si system