Influence of surface damage on highly segmented silicon detectors

Gößling, C.; Lichau, C; Peters, M.; Wüstenfeld, J.; Wunstorf, R.

doi:10.1007/bf03185602

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…In contrast to bulk damage, surface damage originates in ionization energy losses of X-ray photons or charged particles and subsequently leads to an accumulation of space charges in or close to an interface between e.g. an insulating or dielectric layer and silicon [18]. A typical example are interfaces between SiO 2 and silicon when SiO 2 is used as gate oxide or field oxide as an insulating layer between semiconductor structures.…”

Section: Radiation-induced Damage Effects On Silicon Detectorsmentioning

confidence: 99%

Radiation hardness study of the ePix100 sensor and ASIC under direct illumination at the European XFEL

et al. 2021

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The ePix detector family provides multiple variants of hybrid pixel detectors to support a wide range of applications at free electron laser (FEL) facilities. The ePix detectors are by design versatile and easily re-configurable camera systems with common mechanical, electrical and data acquisition interfaces. Operation of detectors at FEL sources providing high brilliance, high repetition rate and ultra-short X-ray pulses poses a high risk of radiation damage to exposed detector components, such as the sensor and the readout Application Specific Integrated Circuit (ASIC). Knowledge about radiation-induced damage is important for understanding its influence on the quality of scientific data and the lifetime of the detector. We present the results of a systematic study of the influence of radiation-induced damage on the performance and lifetime of an ePix100a detector module using a direct attenuated beam of the European X-ray Free Electron Laser Facility (European XFEL) at 9 keV photon energy and average power of 10 μW. An area of 20 pixels×20 pixels was irradiated with an average photon flux of ≈ 7× 109 photons/s to a dose of approximately (760± 65) kGy at the location of the Si/SiO2 interfaces in the sensor. A dose dependent increase in both offset and noise of the ePix100a detector have been observed originating from an increase of the sensor leakage current. Moreover, we observed an effect directly after irradiation resulting in the saturation of individual pixels by their dark current. Changes in gain are evaluated one and half hours post-irradiation and suggest damage to occur also on the ASIC level. Based on the obtained results, thresholds for beam parameters are deduced and the detector lifetime is estimated with respect to the requirements to the data quality in order to satisfy the scientific standards defined by the experiments. We conclude the detector can withstand a beam with an energy up to 1 μJ at a photon energy of 9 keV impacting on an area of 1 mm2. The detector can be used without significant degradation of its performance for several years if the incident photon beam intensities do not exceed the detector's dynamic range by at least three orders of magnitude. Our results provide valuable input for the operation of the ePix100a detector at FEL facilities and the design of future detector technology.

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Section: Radiation-induced Damage Effects On Silicon Detectorsmentioning

confidence: 99%

Radiation hardness study of the ePix100 sensor and ASIC under direct illumination at the European XFEL

et al. 2021

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“…Generally, as for the majority of silicon-based photodetectors, the radiation damage can affect both the surface and the bulk regions [13,14] through ionizing energy loss (IEL) and not-ionizing energy loss (NIEL) respectively, introducing defects and recombination centers. Depending on the energy and the particle type, either one or the other type of damage is more relevant and likely to happen.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Altamura,

Acerbi,

Nociforo

et al. 2021

Preprint

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Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emerging as the technology of choice for many applications, including large high-energy physics experiments where they often are exposed to high radiation fluences. In recent years, there has been an increasing interest in assessing the performance deterioration of such detectors after the irradiation with proton or neutron, with different fluence levels.In this work, samples of different FBK SiPM technologies, made with different manufacturing technologies, were irradiated at the INFN-LNS facility (Italy) with protons reaching fluences up to 10 12 n eq {mm 2 (1 MeV neutron equivalent) which correspond 10 14 n eq {cm 2 to and their performances were characterized in detail after an approximately 30 days room temperature annealing. The results show a significant worsening of the primary noise (dark count rate) of the detectors, which increases with the irradiation dose, whereas the other performance parameters like the micro-cell gain, the correlated noise probability and the photon detection efficiency do not show significant variations over the investigated dose range. The breakdown voltage estimation after irradiation is another important aspect for a SiPM. In this contribution, we show several methods for its estimation and compare the results. We also introduced new methodologies to characterize the performance of the SiPMs when they present a very high level of noise.Lastly, we also analyzed the spatial localization of the proton-induced defects inside the device, i.e. the defects that mostly contribute to the increase of the DCR of the device, through the emission microscopy (EMMI) technique. In particular, we analyzed the SiPMs at the single cell level, trying to identify and spatially localize the defects.

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Characterization of Silicon Photomultipliers after proton irradiation up to 1014neq/
Altamura¹,
Acerbi²,
Nociforo³
et al. 2022
Nuclear Instruments and Methods in Physics Research Section A:
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Influence of surface damage on highly segmented silicon detectors

Cited by 4 publications

References 6 publications

Radiation hardness study of the ePix100 sensor and ASIC under direct illumination at the European XFEL

Radiation hardness study of the ePix100 sensor and ASIC under direct illumination at the European XFEL

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Characterization of Silicon Photomultipliers after proton irradiation up to 1014neq/
Altamura¹,
Acerbi²,
Nociforo³
et al. 2022
Nuclear Instruments and Methods in Physics Research Section A:
6
0
0
0
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Influence of surface damage on highly segmented silicon detectors

Cited by 4 publications

References 6 publications

Radiation hardness study of the ePix100 sensor and ASIC under direct illumination at the European XFEL

Radiation hardness study of the ePix100 sensor and ASIC under direct illumination at the European XFEL

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$

Characterization of Silicon Photomultipliers after proton irradiation up to 1014neq/Altamura1, Acerbi2, Nociforo3 et al. 2022Nuclear Instruments and Methods in Physics Research Section A: 6000View full textAdd to dashboardCite

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Characterization of Silicon Photomultipliers after proton irradiation up to 1014neq/
Altamura¹,
Acerbi²,
Nociforo³
et al. 2022
Nuclear Instruments and Methods in Physics Research Section A:
6
0
0
0
View full text Add to dashboard Cite