The X-ray free-electron lasers that became available during the last decade, like the European XFEL (EuXFEL), place high demands on their instrumentation. Especially at low photon energies below 1 keV, detectors with high sensitivity, and consequently low noise and high quantum efficiency, are required to enable facility users to fully exploit the scientific potential of the photon source. A 1-Megapixel pnCCD detector with a 1024 × 1024 pixel format has been installed and commissioned for imaging applications at the Nano-Sized Quantum System (NQS) station of the Small Quantum System (SQS) instrument at EuXFEL. The instrument is currently operating in the energy range between 0.5 and 3 keV and the NQS station is designed for investigations of the interaction of intense FEL pulses with clusters, nano-particles and small bio-molecules, by combining photo-ion and photo-electron spectroscopy with coherent diffraction imaging techniques. The core of the imaging detector is a pn-type charge coupled device (pnCCD) with a pixel pitch of 75 µm × 75 µm. Depending on the experimental scenario, the pnCCD enables imaging of single photons thanks to its very low electronic noise of 3 e− and high quantum efficiency. Here an overview on the EuXFEL pnCCD detector and the results from the commissioning and first user operation at the SQS experiment in June 2019 are presented. The detailed descriptions of the detector design and capabilities, its implementation at EuXFEL both mechanically and from the controls side as well as important data correction steps aim to provide useful background for users planning and analyzing experiments at EuXFEL and may serve as a benchmark for comparing and planning future endstations at other FELs.
Serial femtosecond crystallography is a rapidly developing method for determining the structure of biomolecules for samples which have proven challenging with conventional X-ray crystallography, such as for membrane proteins and microcrystals, or for time-resolved studies. The European XFEL, the first high repetition rate hard X-ray free electron laser, provides the ability to record diffraction data at more than an order of magnitude faster than previously achievable, putting increased demand on sample delivery and data processing. This work describes a publicly available serial femtosecond crystallography dataset collected at the SPB/SFX instrument at the European XFEL. This dataset contains information suitable for algorithmic development for detector calibration, image classification and structure determination, as well as testing and training for future users of the European XFEL and other XFELs.
The ePix detector family provides multiple variants of hybrid pixel detectors to support a wide range of applications at free electron laser (FEL) facilities. The ePix detectors are by design versatile and easily re-configurable camera systems with common mechanical, electrical and data acquisition interfaces. Operation of detectors at FEL sources providing high brilliance, high repetition rate and ultra-short X-ray pulses poses a high risk of radiation damage to exposed detector components, such as the sensor and the readout Application Specific Integrated Circuit (ASIC). Knowledge about radiation-induced damage is important for understanding its influence on the quality of scientific data and the lifetime of the detector.
We present the results of a systematic study of the influence of radiation-induced damage on the performance and lifetime of an ePix100a detector module using a direct attenuated beam of the European X-ray Free Electron Laser Facility (European XFEL) at 9 keV photon energy and average power of 10 μW. An area of 20 pixels×20 pixels was irradiated with an average photon flux of ≈ 7× 109 photons/s to a dose of approximately (760± 65) kGy at the location of the Si/SiO2 interfaces in the sensor.
A dose dependent increase in both offset and noise of the ePix100a detector have been observed originating from an increase of the sensor leakage current. Moreover, we observed an effect directly after irradiation resulting in the saturation of individual pixels by their dark current. Changes in gain are evaluated one and half hours post-irradiation and suggest damage to occur also on the ASIC level. Based on the obtained results, thresholds for beam parameters are deduced and the detector lifetime is estimated with respect to the requirements to the data quality in order to satisfy the scientific standards defined by the experiments. We conclude the detector can withstand a beam with an energy up to 1 μJ at a photon energy of 9 keV impacting on an area of 1 mm2. The detector can be used without significant degradation of its performance for several years if the incident photon beam intensities do not exceed the detector's dynamic range by at least three orders of magnitude. Our results provide valuable input for the operation of the ePix100a detector at FEL facilities and the design of future detector technology.
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