Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source

Naritsuka, Shigeya; Mori, M.; Takeuchi, Yoshitaka; Maruyama, Toru

doi:10.1016/j.jcrysgro.2009.01.070

Cited by 5 publications

(3 citation statements)

References 14 publications

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“…12,13) Excess desorption of As atoms occurred at high temperature, which resulted in not only a rough surface but also the formation of Ga droplets. 14) Ga droplets are an obstacle to the fabrication of superior devices; therefore, it is necessary to suppress their formation. A thin nitride layer is also applied as a mask and patterning can be performed by scanning tunneling microscopy (STM).…”

Section: Introductionmentioning

confidence: 99%

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

Naritsuka¹,

Mori²,

Takeuchi³

et al. 2011

Jpn. J. Appl. Phys.

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We derive an improved prescription for the merging of matrix elements with parton showers, extending the CKKW approach. A flavour-dependent phase space separation criterion is proposed. We show that this new method preserves the logarithmic accuracy of the shower, and that the original proposal can be derived from it. One of the main requirements for the method is a truncated shower algorithm. We outline the corresponding Monte Carlo procedures and apply the new prescription to QCD jet production in e + e − collisions and Drell-Yan lepton pair production. Explicit colour information from matrix elements obtained through colour sampling is incorporated in the merging and the influence of different prescriptions to assign colours in the large N C limit is studied. We assess the systematic uncertainties of the new method.

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Section: Introductionmentioning

confidence: 99%

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

Naritsuka¹,

Mori²,

Takeuchi³

et al. 2011

Jpn. J. Appl. Phys.

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“…In a previous study, the formation of Ga droplets could not be suppressed, even when an As molecular beam was applied during the nitridation of a GaAs(001) surface at high temperature. 7) Since Ga droplets are an obstacle in the fabrication of devices, it is important to suppress their formation. In the present work, the nitridation of a GaAs(111)B surface was studied and compared with that of a GaAs(001) surface.…”

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confidence: 99%

X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source

Naritsuka¹,

Mori²,

Takeuchi³

et al. 2012

Jpn. J. Appl. Phys.

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The mechanism of GaAs(111)B surface nitridation using an RF-radical source was studied while systematically changing the nitridation temperature. Atomic force microscopy and X-ray photoemission spectroscopy measurements indicated that the nitridation of the GaAs(111)B surface showed a similar dependence on nitridation temperature to that of a GaAs(001) surface. Both the degree of nitridation and the Ga adatom density increased with increasing nitridation temperature, and above 510 °C, Ga droplets were formed. Strong photoluminescence signals were obtained from the GaAs(111)B surfaces.

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“…1 Introduction Nitridation of GaAs surface is known as a very promising technique for the fabrication of ultra thin cubic-GaN (c-GaN) layer [1][2][3]. The layer is available not only for the buffer layer for c-GaN growth but also passivating the GaAs surface.…”

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XPS study of nitridation mechanism of GaAs (001) surface by RF‐radical source

Naritsuka

Mori

Takeuchi

et al. 2010

Phys. Status Solidi (c)

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Nitridation mechanism of GaAs (001) surface is studied with systematically changing the nitridation temperature. Consequently, N1s spectrum is found useful to determine the degree of the nitridation. N1s spectrum consists of N‐Ga component and other component (denoted by component A). The N‐Ga component becomes a major component in the samples nitridated at high temperature especially without As supply. The thickness of nitridated layers was also estimated by the concentration of N atoms accumulated at the interface of GaAs/GaN/GaAs multilayers. It was changed from 1.3 to 6.6 ML with changing nitridation temperature from 346 to 571°C. The temperature dependence of the N‐Ga component coincides with the thickness of nitridated layers. This indicates that N atoms bonded with the Ga atoms during the nitridation stayed at the interface and formed a GaN thin layer by growing a GaAs capping layer on it. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source

Cited by 5 publications

References 14 publications

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source

XPS study of nitridation mechanism of GaAs (001) surface by RF‐radical source

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