Influence of substrate properties on the growth of titanium films. Part I

Poppeller, M.; Abermann, R.

doi:10.1016/s0040-6090(96)09142-0

Cited by 15 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Poppeller and Abermann have reported results consistent with this picture [40]. They showed directly that deposition of clean Ti on pre-deposited TiOX layers.…”

Section: Discussionmentioning

confidence: 67%

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Floro

Hearne

Hunter

et al. 2001

Journal of Applied Physics

339

206

View full text Add to dashboard Cite

Real-time measurements of stress evolution during the deposition of VolmerWeber thin films reveal a complex interplay between mechanisms for stress generation and stress relaxation. We observed a generic stress evolution from compressive to tensile, then back to compressive stress as the film thickened, in amorphous and polycrystalline Ge and Si, as well as in polycrystall;ne Ag, Al, and Ti. Direct measurements of stress relaxation during growth interrupts demonstrate that the generic behavior can occur even in the absence of stress relaxation. When relaxation did occur, the mechanism depended sensitively on whether the film was continuous or discontinuous, on the process conditions, and on the fildsubstrate interracial strength.For Ag films, interracial shear dominated the early relaxation behnavior, whereas this mechanism was negligible in Al films due to the much stronger bonding at the A1/SiOz interface. For amorphous Ge, selective relaxation of tensile stress was observed only at elevated temperatures, consistent with surface-diffusion-based mechanisms. In "all the films studied here, stress relaxation was suppressed after the films became continuous...

show abstract

“…Poppeller and Abermann have reported results consistent with this picture [40]. They showed directly that deposition of clean Ti on pre-deposited TiOX layers.…”

Section: Discussionmentioning

confidence: 67%

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Floro

Hearne

Hunter

et al. 2001

Journal of Applied Physics

339

206

View full text Add to dashboard Cite

show abstract

“…A very common growth mode of polycrystalline thin films is the Volmer-Weber mode, which is well known to comprise three different growth stages: (i) the precoalescence stage, where isolated islands nucleate and grow, (ii) the coalescence stage, where islands merge and percolate and the remaining channels are filled, and (iii) the final stage, where henceforth a continuous film is growing. Previous investigations have shown that the evolution and relaxation of stress [1][2][3][4] during the Volmer-Weber growth of metals depend strongly on the surface mobility, leading to two types of characteristic thickness dependence of the stress irrespective of the materials (e.g., Ag [5][6][7][8], Cu [7,[9][10][11], Au [9,10], Al [12], Fe [13], Cr [13], Ni [14], and Ti [15]). Figures 1(a) and 1(c) serve to illustrate these findings by means of two Fe films deposited at 310 and 520 K, respectively.…”

mentioning

confidence: 99%

Compressive Stress in Polycrystalline Volmer-Weber Films

2005

View full text Add to dashboard Cite

The Volmer-Weber mode for growing polycrystalline films, which comprises island, network, and channel stages before the films become continuous, is well known for its complex stress behavior with compressive and tensile stress alternating in the initial three growth stages. Recently, two new mechanisms for the compressive stress have been proposed [Phys. Rev. Lett. 88, 156103 (2002); 89, 126103 (2002)], which account for the reversibility of stress generation and relaxation. We show that the two mechanisms play only minor roles for the development of compressive stress, which is confirmed to be due to capillarity effects in the precoalescence stage.

show abstract

On the residual stress developed in the nanostructure of computer simulated thin films

Jalali-Jafari

Savaloni

Shahraki

2007

Physica Status Solidi (b)

View full text Add to dashboard Cite

A 1 + 1 dimensional computer simulation model based on aggregation of hard disks is used to investigate the relationship between the nanostructure of simulated thin metallic (e.g., Ni) films on the (111) face of fcc or the (100) face of hcp substrates under different deposition conditions and the stress developed in these films. The intrinsic mechanical stress in these films, while remaining almost constant up to a certain substrate temperature, passes a tensile stress maximum, which depends on the deposition rate, and decreases towards zero with increasing substrate temperature, owing to an increased diffusion process. By increasing the deposition angle, the microstructure of film changes from a dense film with few voids, to a microstructure with (somewhat densely packed) columns/bundles inclined towards the incidence atoms with elongated voids. The latter decreases the tensile stress, while the former increases the compressive stress, resulting in total compressive stress, particularly at deposition angles above 60°. The results are compared with the experiments performed on Ni/glass films that were produced under UHV condition and with different deposition parameters. The nanostrain in the latter films were obtained using the Warren -Averbach method for X-ray diffraction line-broadening analysis. A qualitatively good agreement between simulation and experimental results is obtained.

show abstract

Influence of substrate properties on the growth of titanium films. Part I

Cited by 15 publications

References 10 publications

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer–Weber thin films

Compressive Stress in Polycrystalline Volmer-Weber Films

On the residual stress developed in the nanostructure of computer simulated thin films

Contact Info

Product

Resources

About