Compressive Stress in Polycrystalline Volmer-Weber Films

Abstract

The Volmer-Weber mode for growing polycrystalline films, which comprises island, network, and channel stages before the films become continuous, is well known for its complex stress behavior with compressive and tensile stress alternating in the initial three growth stages. Recently, two new mechanisms for the compressive stress have been proposed [Phys. Rev. Lett. 88, 156103 (2002); 89, 126103 (2002)], which account for the reversibility of stress generation and relaxation. We show that the two mechanisms play only minor roles for the development of compressive stress, which is confirmed to be due to capillarity effects in the precoalescence stage.

Correlation of shape changes of grain surfaces and reversible stress evolution during interruptions of polycrystalline film growth

“…18 The slow process was shown to correspond to a process occurring in the bulk of the film and can be attributed mostly to grain growth after deposition. 5,11,18 Although the exact mechanism for the fast reversible stress evolution has not been identified, a few important features are suggested by previous experimental observations. 7,9,13,15,18 (1) The mechanism leads to "reversible stress evolution" during a growth interruption and upon resumption.…”

“…In contrast, under conditions of high atomic mobility (Type II behavior), the post-coalescence stress evolves to a compressive state, and evolves in the tensile direction when growth is interrupted. [5][6][7][8][9][10][11][12] Remarkably, for short interruptions, when growth is resumed, the stress evolves back to the pre-interruption level. 8 Understanding the mechanisms for this complex stress evolution has been the focus of much recent research.…”

Atom-Molecule Collisions in an Optically Trapped Gas

“…Two-photon PA [25,26] toward highly excited states can offer good configuration. Another challenge is to prepare the molecules in a well defined ro-vibrationnal level using Raman PA [25,26], chirped pulse PA [27] Note added: We recently became aware that similar work has been carried out simultaneously in the group of M. Weidemüller at the Physikalisches Institut in Freiburg, Germany.…”

Stress evolution in evaporated HfO2/SiO2multilayers

“…Residual stress is closely associated to the stress during film growth. Growth stress in monolayers [9][10][11][12] as well as multilayers [13][14][15] was also widely studied. However, the stress during all stages including growth、cooling and venting has been less investigated.…”