Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate

Kadir, Abdul; Srivastava, Saurabh; Li, Zhang; Lee, Kenneth Eng Kian; Sasangka, Wardhana Aji; Gradečak, Silvija; Chua, Soo Jin; Fitzgerald, Eugene A.

doi:10.1016/j.tsf.2018.08.011

Cited by 20 publications

(12 citation statements)

References 25 publications

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“…For step-II, both NH 3 and TMAl predoses may be discovered in the literature. ,− In this study, while keeping all of the other steps identical, the predose step was varied with four durations (15, 60, 120, and 240 s) of NH 3 flux at 40 μmol/s and two durations (6 and 12 s) of TMAl flux at 0.2 μmol/s to realize six uncracked AlN-on-Si epistructures. Also, complete HEMT stacks were grown on comparable AlN nucleation layers in separate process runs, comprising additional deposition of a linearly graded AlGaN buffer, GaN buffer, GaN channel, AlGaN barrier, and GaN cap of the standard structure.…”

Section: Resultsmentioning

confidence: 99%

“…If significant diffusion during the bulk growth period takes place instead, defects such as grain boundaries and dislocations are expected to facilitate the process. Increasing the NH 3 predose duration has been reported 43−45 to yield lower dislocation density in GaN buffer, and a commensurate density reduction in the AlN nucleation layer 45 itself has been suggested as the underlying cause. Based on the observed delay in coalescence with increase in the predose duration, we anticipate that thicker SiN x functions as more efficient local masks 60,61 to reduce the dislocation densities.…”

Section: Si Signal Corresponding To Sinmentioning

confidence: 99%

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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Ghosh

Hinz

Fairclough

et al. 2021

ACS Appl. Electron. Mater.

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The performance of transistors designed specifically for high-frequency applications is critically reliant upon the semiinsulating electrical properties of the substrate. The suspected formation of a conductive path for radio frequency (RF) signals in the highly resistive (HR) silicon substrate itself has been long held responsible for the suboptimal efficiency of as-grown GaN high electron mobility transistors (HEMTs) at higher operating frequencies. Here, we reveal that not one but two discrete channels distinguishable by their carrier type, spatial extent, and origin within the metal-organic vapor phase epitaxy (MOVPE) growth process participate in such parasitic substrate conduction. An ntype layer that forms first is uniformly distributed in the substrate, and it has a purely thermal origin. Alongside this, a p-type layer is localized on the substrate side of the AlN/Si interface and is induced by diffusion of group-III element of the metal-organic precursor. Fortunately, maintaining the sheet resistance of this p-type layer to high values (∼2000 Ω/□) seems feasible with particular durations of either organometallic precursor or ammonia gas predose of the Si surface, i.e., the intentional introduction of one chemical precursor just before nucleation. It is proposed that the mechanism behind the control actually relies on the formation of disordered AlSiN between the crystalline AlN nucleation layer and the crystalline silicon substrate.

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Section: Resultsmentioning

confidence: 99%

Section: Si Signal Corresponding To Sinmentioning

confidence: 99%

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Ghosh

Hinz

Fairclough

et al. 2021

ACS Appl. Electron. Mater.

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“…Sample E, which is grown by employing the USAP approach, exhibits the lowest FWHM values of 780 and 1372 arcsec for the AlN (002) and (102) diffractions, respectively (Figure a,b). From the FWHM values, the total dislocation density is estimated to be reduced from 2.4×10 10 cm –2 for sample A to 1.2×10 10 cm –2 for sample E. These values are comparable to or even lower than that for AlN layers grown at the conventional high growth temperature. − In order to further confirm these results, transmission electron microscopy (TEM) experiments were performed. Panels (a and b) and (c and d) in Figure show the bright-field TEM images under two-beam conditions with g = [0002] and g =[11-20] for sample A (with conventional pretreatment conditions) and sample E, respectively.…”

Section: Resultsmentioning

confidence: 83%

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Cai

Yang

et al. 2022

ACS Appl. Electron. Mater.

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An ultralow-supersaturation Al pretreatment approach has been proposed to achieve low threading dislocation (TD) density and low radio frequency (RF) loss GaN/AlN layer stacks on Si substrates. By employing this approach, the Al–Si liquid alloy is eliminated, and a sharp AlN/Si interface is obtained. In addition, the size of the AlN nucleation islands is enlarged and thus the TDs generated from the coalescence of the islands are reduced even at a low growth temperature. Owing to the low TD density AlN layer, a 1.5 μm crack-free GaN layer can be achieved directly on this AlN layer and no transition layers are required. The full width at half maximum values are as low as 390 and 440 arcsec for the GaN (002) and (102) diffractions, respectively. Owing to a low growth temperature and short growth time, the RF loss of the epi-stack is as low as 0.29 dB/mm at 10 GHz. This work shows great potential for the fabrication of high-quality and low-loss GaN-on-Si RF devices.

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“…[ 12–16 ] For power electronic applications, GaN HEMTs fabricated on Si substrate are the most usual structures owing to their cost‐effective large‐size wafer and conductive properties. [ 17–20 ] In addition, the GaN‐on‐Si devices can tape‐out compatibly with the matured Si CMOS process flows to reduce the processing cost further for mass production.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

115

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate

Cited by 20 publications

References 25 publications

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Recent Advances in GaN‐Based Power HEMT Devices

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Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate

Cited by 20 publications

References 25 publications

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Recent Advances in GaN‐Based Power HEMT Devices

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Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate