Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films

Gautier, C.; Moulard, G.; Chatelon, Jean-Pierre; Motyl, Guy

doi:10.1016/s0040-6090(00)01806-x

Cited by 15 publications

(6 citation statements)

References 18 publications

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“…Cr coatings of 150 nm thickness show a similar behavior to the Cu; as bias increased to À500 V, the residual stress became compressive going from 1.0 to À2.2 GPa [11]. Effects of the bias on the film roughness were small and did not present a trend, as shown by other researchers [9,21]. The effect of the bias on thin films is due to the increase of energetic particles, which causes an Ôatom peening mechanismÕ and explains the transition from tensile to compressive stress [11,14].…”

Section: Residual Stress Resultsmentioning

confidence: 55%

“…The atom peening mechanism still applies but perhaps other mechanisms are more dominant. It has been shown in many metals that when a substrate bias is applied, the texture of the films changes [9,11,21]. The texture can then be related to changes in microstructure and film properties such the elastic modulus and yield strength which are related to increase/decrease in the films intrinsic residual stresses [22,23].…”

Section: Residual Stress Resultsmentioning

confidence: 99%

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Residual stress analysis in thick uranium films

Hodge

Foreman

Gallegos

2005

Journal of Nuclear Materials

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Residual stress analysis was performed on thick, 1-25 lm, depleted uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolution was studied as a function of coating thickness and applied negative bias voltage (0, À200, À300 V). The stresses developed were always compressive; however, increasing the coating thickness and applying a bias voltage presented a trend towards more tensile stresses and thus an overall reduction of residual stresses.

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Section: Residual Stress Resultsmentioning

confidence: 55%

Section: Residual Stress Resultsmentioning

confidence: 99%

Residual stress analysis in thick uranium films

Hodge

Foreman

Gallegos

2005

Journal of Nuclear Materials

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“…4, the films deposited at bias voltage of − 40 V was cloudy with a rough surface by the conventional magnetron sputtering and a non-columnar structure was observed, while the Ti films deposited at the substrate bias of ECR plasma irradiation was − 63 V, fixed sputtering bias of −40 V by the ECR-PMS showed a uniform and smooth surface, as well as void free and densely packed configuration. Although increasing the substrate bias in the conventional magnetron sputtering can increase effectively ion-bombardment effects such as decreasing crystallite size, suppressing a columnar growth and thus the existence of intercrystalline voids to produce a relative dense morphology [13,22], it can be correlated to another important phenomenon: change of preferential orientation which is attributed to the intrinsic stress varying in the films due to the bombardment effect and has been described in some articles [18,22]. However, the ECR plasma produces a relative low-energy-ion bombardment by controlling the substrate bias, which can significantly modify structural characteristic of the film and prepare a rather smooth, much denser film.…”

Section: Afm and Sem Analysis: Morphology Of The Ti Filmsmentioning

confidence: 99%

Deposition of dense and smooth Ti films using ECR plasma-assisted magnetron sputtering

Zhang

Shi

et al. 2009

Surface and Coatings Technology

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“…The intrinsic stress of magnetron-sputtered thin films varies by thickness, and it has a tendency to reach a definite value as the film becomes thicker [17]. Although the film intrinsic stress level and polarity can be tailored by adjusting deposition parameters (pressure, temperature, substrate voltage, etc), the vertical stress gradient across the film thickness is very hard to control (if not completely impossible).…”

Section: Introductionmentioning

confidence: 99%

Stress anisotropy compensation of the sputter-deposited metal thin films by variable bias voltage

Khosraviani¹,

Leung²

2013

J. Micromech. Microeng.

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We introduce a new technique for compensating stress anisotropy across the thickness of sputter-deposited metal films. Our technique balances the film vertical stress gradient by altering the substrate bias during sputtering and by controlling the ion flux and energy that bombards the growing film. Sputter-deposited metal films are appealing materials for microfabrication of freestanding and out-of-plane structures, especially because of their low thermal budget. These microstructures extend the design space of micro-electro-mechanical systems (MEMS)-based devices, and they overcome some of the limitations of in-plane processing. Unfortunately, most elemental metals and alloys when sputter deposited have a substantial stress gradient across their thickness that can deteriorate their mechanical properties and severely distort the shape of the fabricated freestanding microstructures. The stress gradient across the thickness of a sputtered film can be compensated (balanced) by embedding a layer in the film with the opposite stress polarity compared to that of the bulk of the film. The force exerted by the stress mismatch between this layer and the bulk of the film easily overcomes the film's vertical stress gradient. This compensating force guarantees that a released freestanding structure remains flat and does not curl upward. This virtual layer is introduced to the growing film by altering the substrate bias voltage during the sputtering process. The substrate bias voltage controls the ion flux and energy that bombards the film, and it enables tailoring the film stress parameters. This technique has enabled us to fabricate freestanding microstructures up to 500 μm long with negligible stress-related deformation.

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Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films

Cited by 15 publications

References 18 publications

Residual stress analysis in thick uranium films

Residual stress analysis in thick uranium films

Deposition of dense and smooth Ti films using ECR plasma-assisted magnetron sputtering

Stress anisotropy compensation of the sputter-deposited metal thin films by variable bias voltage

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