Abstract:To broaden the application of cesium lead halide perovskites, doping technology has been widely proposed. In this study, we calculated a 12.5% concentration of a Sr-doped CsPbX3 (X = Cl,...
“…All the obtained phases are with the space group of Pm3m [24,25,28,[34][35][36][37], and the obtained lattice constants are gathered in table 1. The calculated lattice constant of CsPbCl 3 is a = 5.716 Å, which is close to the experimental value (5.605 Å) [38] and theoretical value (5.717 Å) [39]. For x = 0.037, the obtained lattice constants are 5.688 Å (Mg doping) and 5.681 Å (Cu doping).…”
Section: Computational Detailssupporting
confidence: 83%
“…The electron effective masse of CsPbCl 3 is 0.430 m 0 (R → Γ) and 1.155 m 0 (R → X), and its hole effective masses are almost the same (0.326 m 0 , 0.325 m 0 ) in the two paths. These values are compared with that of previously reported theoretical values [39,52]. Compared with CsPbCl 3 , the hole effective masses of TM-doped CsPbCl 3 in the two paths show a reduction of 0.03-0.06 m 0 , and the electron effective masses decrease in the R → Γ path and unobviously change in the R → X path.…”
Section: Optical Propertiessupporting
confidence: 52%
“…The calculation formula for the exciton binding energy using the semiclassical Wannier-Mott theory is as follows: 2. The obtained E b (238 meV in the R → X path) of CsPbCl 3 is larger than the other theoretical value (171 meV) [39]. As can be seen in table 2, the obvious increase of the exciton binding energy from pure CsPbCl 3 to TM-doped CsPbCl 3 in the R → Γ path is due to the smaller ε 10 for the TM-doped CsPbCl 3 , thus favoring higher emission energies.…”
Section: Optical Propertiesmentioning
confidence: 56%
“…When substituting TM for Pb, the ε 1 (ω) (figure 4(a)) and ε 2 (ω) (figure 4(b)) are smaller in comparison with that of CsPbCl 3, which lies in that the doped systems possess higher bandgaps as shown in figures 2(b)-(e). According to the obtained static dielectric constants (ε 10 ) from ε 1 (ω) at 0 eV (figure 4(a)), we find that the ε 10 of CsPbCl 3 is 3.80 compared with available reported values (3.88, 4.43) shown in table 2 [39,48], and the decreasing trends of ε 10 with the increase of TM doping content are consistent with trends of their bandgaps as described in energy band structure above. For an efficient luminescence material, a small static dielectric constant is vital for a high degree of charge transport, which can prevent a high level of charge defects and promote electron-hole radiative recombination.…”
The inorganic perovskite CsPbCl3 has raised great concern in recent years due to its great tunability of luminescence properties via impurity doping. However, the blue-emitting mechanism of the impurity-doped CsPbCl3 is unexplored. In this work, we focus on the structural, electronic, and optical properties of CsPb1-x
TM
x
Cl3 (TM=Mg, Cu; x = 0, 0.037, 0.074) based on the first-principles calculations. It is indicated that TM doping decreases the lattice parameter, deforms octahedral structure, and improves the stability of CsPbCl3. The increased direct bandgap values and unique TM energy levels occupation show that the doped systems behave only blue-emitting well. The Mg-s and Cu-3d (eg) states out the bandgaps are close to the valence band edge and conduction band edge respectively, both promoting the carrier radiation recombination. Furthermore, the density of states analyses demonstrates that the enhanced emission of TM-doped CsPbCl3 benefits from the TM different electronic configurations and the different hybridization ways (Mg 3s/Cl 3p, Cu eg/Cl 3p), producing more carriers with increasing x respectively. The obtained optical properties imply that the TM-doped systems exhibit significant optical absorption and high carrier mobilities, promoting excellent luminescence efficiency. Our work explains the blue-emitting mechanism of the TM-doped CsPbCl3, providing a prospective strategy for designing highly efficient blue-emitting devices for optoelectronic applications based on the available parent materials by modulating the bandgap, synergistic relation of impurity energy level and band edge, and optical property.
“…All the obtained phases are with the space group of Pm3m [24,25,28,[34][35][36][37], and the obtained lattice constants are gathered in table 1. The calculated lattice constant of CsPbCl 3 is a = 5.716 Å, which is close to the experimental value (5.605 Å) [38] and theoretical value (5.717 Å) [39]. For x = 0.037, the obtained lattice constants are 5.688 Å (Mg doping) and 5.681 Å (Cu doping).…”
Section: Computational Detailssupporting
confidence: 83%
“…The electron effective masse of CsPbCl 3 is 0.430 m 0 (R → Γ) and 1.155 m 0 (R → X), and its hole effective masses are almost the same (0.326 m 0 , 0.325 m 0 ) in the two paths. These values are compared with that of previously reported theoretical values [39,52]. Compared with CsPbCl 3 , the hole effective masses of TM-doped CsPbCl 3 in the two paths show a reduction of 0.03-0.06 m 0 , and the electron effective masses decrease in the R → Γ path and unobviously change in the R → X path.…”
Section: Optical Propertiessupporting
confidence: 52%
“…The calculation formula for the exciton binding energy using the semiclassical Wannier-Mott theory is as follows: 2. The obtained E b (238 meV in the R → X path) of CsPbCl 3 is larger than the other theoretical value (171 meV) [39]. As can be seen in table 2, the obvious increase of the exciton binding energy from pure CsPbCl 3 to TM-doped CsPbCl 3 in the R → Γ path is due to the smaller ε 10 for the TM-doped CsPbCl 3 , thus favoring higher emission energies.…”
Section: Optical Propertiesmentioning
confidence: 56%
“…When substituting TM for Pb, the ε 1 (ω) (figure 4(a)) and ε 2 (ω) (figure 4(b)) are smaller in comparison with that of CsPbCl 3, which lies in that the doped systems possess higher bandgaps as shown in figures 2(b)-(e). According to the obtained static dielectric constants (ε 10 ) from ε 1 (ω) at 0 eV (figure 4(a)), we find that the ε 10 of CsPbCl 3 is 3.80 compared with available reported values (3.88, 4.43) shown in table 2 [39,48], and the decreasing trends of ε 10 with the increase of TM doping content are consistent with trends of their bandgaps as described in energy band structure above. For an efficient luminescence material, a small static dielectric constant is vital for a high degree of charge transport, which can prevent a high level of charge defects and promote electron-hole radiative recombination.…”
The inorganic perovskite CsPbCl3 has raised great concern in recent years due to its great tunability of luminescence properties via impurity doping. However, the blue-emitting mechanism of the impurity-doped CsPbCl3 is unexplored. In this work, we focus on the structural, electronic, and optical properties of CsPb1-x
TM
x
Cl3 (TM=Mg, Cu; x = 0, 0.037, 0.074) based on the first-principles calculations. It is indicated that TM doping decreases the lattice parameter, deforms octahedral structure, and improves the stability of CsPbCl3. The increased direct bandgap values and unique TM energy levels occupation show that the doped systems behave only blue-emitting well. The Mg-s and Cu-3d (eg) states out the bandgaps are close to the valence band edge and conduction band edge respectively, both promoting the carrier radiation recombination. Furthermore, the density of states analyses demonstrates that the enhanced emission of TM-doped CsPbCl3 benefits from the TM different electronic configurations and the different hybridization ways (Mg 3s/Cl 3p, Cu eg/Cl 3p), producing more carriers with increasing x respectively. The obtained optical properties imply that the TM-doped systems exhibit significant optical absorption and high carrier mobilities, promoting excellent luminescence efficiency. Our work explains the blue-emitting mechanism of the TM-doped CsPbCl3, providing a prospective strategy for designing highly efficient blue-emitting devices for optoelectronic applications based on the available parent materials by modulating the bandgap, synergistic relation of impurity energy level and band edge, and optical property.
“…The dielectric function of pure RbSnI 3 has peaks at 2.92 and 3.69 eV for the real and imaginary components, respectively. The peaks of real dielectric function for Rb 0.875 Cr 0.125 SnI [54]. The analysis suggests that replacing the toxic Pb with Sn would not negatively impact the optical performance of the perovskite material.…”
Perovskite solar cells based on lead have witnessed unprecedented growth over the past decade, achieving an impressive power conversion efficiency (PCE) of 25.8%. However, lead toxicity remains a concern for commercialization. In order to resolve the matter, scientists have been investigating alternative materials; in this context, rubidium-based lead-free perovskites like RbSnI3 may be a promising alternative because it has a high optical conductivity and absorption coefficient. Density Functional Theory (DFT)-based first-principles studies are used in this work to examine the effect of metal doping (specifically Cr, Sr, Ag, and Cu) on the optoelectronic and structural characteristics of orthorhombic RbSnI3 perovskite. In addition, we conducted a comprehensive study to investigate the impact of metal doping on the formation energy, structural stability, and HOMO-LUMO energy levels of RbSnI3 perovskite. Introducing transition metal cations (Cr2+, Ag+, and Cu+) at the Rb site results in a flat band in the conduction band region, transforming the RbSnI3’s indirect band gap into a direct one and significantly affecting the optoelectronic properties. The DFT results are then integrated into the Solar Cell Capacitance Simulator (SCAPS-1D) to estimate the effectiveness of the modeled device. The Cu-doped RbSnI3 device exhibits the highest PCE of 20.2%. Furthermore, Ag and Cu doping in RbSnI3 increases bond length, which reduces exciton binding energy and helps with charge carrier generation.
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