Based on the density functional theory and following the first-principle method, this paper investigated the electronic structures, density of states, effective masses of the electrons and holes, and optical properties...
Low-toxicity, air-stable cesium bismuth iodide Cs3Bi2X9 (X = I, Br, and Cl) perovskites are gaining substantial attention owing to their excellent potential in photoelectric and photovoltaic applications. In this work, the lattice constants, band structures, density of states, and optical properties of the Cs3Bi2X9 under high pressure perovskites are theoretically studied using the density functional theory. The calculated results show that the changes in the bandgap of the zero-dimensional Cs3Bi2I9, one-dimensional Cs3Bi2Cl9, and two-dimensional Cs3Bi2Br9 perovskites are 3.05, 1.95, and 2.39 eV under a pressure change from 0 to 40 GPa, respectively. Furthermore, it was found that the optimal bandgaps of the Shockley–Queisser theory for the Cs3Bi2I9, Cs3Bi2Br9, and Cs3Bi2Cl9 perovskites can be reached at 2–3, 21–26, and 25–29 GPa, respectively. The Cs3Bi2I9 perovskite was found to transform from a semiconductor into a metal at a pressure of 17.3 GPa. The lattice constants, unit-cell volume, and bandgaps of the Cs3Bi2X9 perovskites exhibit a strong dependence on dimension. Additionally, the Cs3Bi2X9 perovskites have large absorption coefficients in the visible region, and their absorption coefficients undergo a redshift with increasing pressure. The theoretical calculation results obtained in this work strengthen the fundamental understanding of the structures and bandgaps of Cs3Bi2X9 perovskites at high pressures, providing a theoretical support for the design of materials under high pressure.
Ultrathin inorganic halogenated perovskites have attracted attention owing to their excellent photoelectric properties. In this work, we designed two types of Ruddlesden–Popper hybrid perovskites, Csn+1SnnBr3n+1 and CsnSnn+1Br3n+2, and studied their band structures and band gaps as a function of the number of layers (n = 1–5). The calculation results show that Csn+1SnnBr3n+1 has a direct bandgap while the bandgap of CsnSnn+1Br3n+2 can be altered from indirect to direct, induced by the 5p-Sn state. As the layers increased from 1 to 5, the bandgap energies of Csn+1SnnBr3n+1 and CsnSnn+1Br3n+2 decreased from 1.209 to 0.797 eV and 1.310 to 1.013 eV, respectively. In addition, the optical absorption of Csn+1SnnBr3n+1 and CsnSnn+1Br3n+2 was blue-shifted as the structure changed from bulk to nanolayer. Compared with that of Csn+1SnnBr3n+1, the optical absorption of CsnSnn+1Br3n+2 was sensitive to the layers along the z direction, which exhibited anisotropy induced by the SnBr2-terminated surface.
Lead-free perovskites of Cs3Sb2X9 (X = Cl, Br, or I) have attracted wide attention owing to their low toxicity. High pressure is an effective and reversible method to tune bandgap without changing the chemical composition. Here, the structural and photoelectric properties of Cs3Sb2X9 under high pressure were theoretically studied by using the density functional theory. The results showed that the ideal bandgap for Cs3Sb2X9 can be achieved by applying high pressure. Moreover, it was found that the change of the bandgap is caused by the shrinkage of the Sb-X long bond in the [Sb2X9]3− polyhedra. Partial density of states indicated that Sb-5s and X-p orbitals contribute to the top of the valence band, while Sb-5p and X-p orbitals dominate the bottom of the conduction band. Moreover, the band structure and density of states showed significant metallicity at 38.75, 24.05 GPa for Cs3Sb2Br9 and Cs3Sb2I9, respectively. Moreover, the absorption spectra showed the absorption edge redshifted, and the absorption coefficient of the Cs3Sb2X9 increased under high pressure. According to our calculated results, the narrow bandgap and enhanced absorption ability under high pressure provide a new idea for the design of the photovoltaic and photoelectric devices.
Lead halide perovskites (LHPs) are emerging as promising candidates for use in various high-performance optoelectronic applications, yet their photophysics remains a topic of debate. Here, we theoretically investigated how the ultrafast optical properties of a few prototype LHPs are affected by many-body interactions, including the bandgap renormalization (BGR) effect, the band-filling (BF) effect, the free-carrier absorption effect, and the exciton effect, at carrier densities ranging from 1016 to 1019 cm−3. The results show that the exciton absorption becomes more obvious near the bandgap with increasing exciton energy (as the halogen component of the LHP is varied from I to Cl). Transient reflectivity results indicate that the signal has one peak below the bandgap as a result of the BGR effect at low carrier densities and one valley above the bandgap originating from the BF effect at high carrier densities. In addition, the absorbance decreases with increasing the carrier density as a result of the BF effect because the filled energy levels are observed at 2 meV above the bottom of the conduction band. The results of the present work are expected to promote the application of LHPs in solar cells, light-emitting diodes, and other photoelectric devices.
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