Influence of sputtering power on crystal quality and electrical properties of Sc-doped AlN film prepared by DC magnetron sputtering

Highly c-axis oriented AlN film grown by unbalanced magnetron reactive sputtering and its electrical properties

“…When the coil current increases from 0 to 1.0 A, it is obvious that the intensity of the AlN (002) peak increases, and the intensity of the AlN (100) peak decreases. This phenomenon was also observed in AlN films grown by magnetron sputtering with substrate heating or with increasing sputtering power [22][23][24][25]. The AlN-1.0 has a stronger and sharper (002) AlN peak, indicating that this AlN film is highly c-axis oriented.…”

Electric and pyroelectric properties of AlN thin films deposited by reactive magnetron sputtering on Si substrate

“…Due to the outstanding properties and versatility in application, numerous surface science studies have been dedicated to refine and advance techniques able to produce pure [1][2][3][4][5][6][7][8][9][10] and doped [11][12][13][14] high quality aluminum nitride layers, such as direct current [1,13], pulsed direct current [2,4] and radio-frequency [5,14] magnetron sputtering, pulsed laser deposition [3,12] or molecular beam epitaxy [9][10][11], and more recently, ion beam sputtering [6] or atomic layer deposition [7,8]. temperature variation.…”

Implications of heterostructural alloying for enhanced piezoelectric performance of (Al,Sc)N

“…Subsequent studies took one of two directions: epitaxial stabilization of the rocksalt structure for x > 0.5 with interest in the electronic structure [4] or effects of alloying on piezoelectric properties of the wurtzite phase for x < 0.5 [5]. After increases in the longitudinal piezoelectric strain coefficient (d 33 ) were reported by Akiyama et al, the majority of the reported efforts focused on the effect of deposition parameters on crystal quality [6][7][8][9][10], residual stress [11,12], dielectric properties [6,7,13], and overall electromechanical response [11,14,15]. Motivated by industrial interest in the improved performance in AlN-based piezoelectric microelectromechanical systems (piezoMEMS) devices, the breadth of this work was focused on compositions with 0 < x < 0.4, where single-phase textured wurtzite materials could be synthesized.…”