Influence of sputtering power on structural, optical and electrical properties of CdTe thin films prepared by DC magnetron sputtering

Gu, Ping; Zhu, Xinghua; Li, Jitao; Wu, Haihua; Yang, Dingyu

doi:10.1007/s10854-018-9599-6

Cited by 10 publications

(9 citation statements)

References 38 publications

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“…This result is mainly determined by the relationship between the energy of the incident light and the band gap of CdTe films. The band gap of the samples was calculated by the following formula [25]:(αhv)2=A(hv−Eg) α=ln(1T)d where α is the absorption coefficient, E g is the energy band gap, hv is the photon energy, A is a constant, d is the film thickness, and T represents the transmittance. The results are shown in Figure 7b.…”

Section: Resultsmentioning

confidence: 99%

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Regulation of Substrate-Target Distance on the Microstructural, Optical and Electrical Properties of CdTe Films by Magnetron Sputtering

Zhu

et al. 2018

Materials

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Cadmium telluride (CdTe) films were deposited on glass substrates by direct current (DC) magnetron sputtering, and the effect of substrate-target distance (Dts) on properties of the CdTe films was investigated by observations of X-ray diffraction (XRD) patterns, atomic force microscopy (AFM), UV-VIS spectra, optical microscopy, and the Hall-effect measurement system. XRD analysis indicated that all samples exhibited a preferred orientation along the (111) plane, corresponding to the zinc blende structure, and films prepared using Dts of 4 cm demonstrated better crystallinity than the others. AFM studies revealed that surface morphologies of the CdTe films were strongly dependent on Dts, and revealed a large average grain size of 35.25 nm and a high root mean square (RMS) roughness value of 9.66 nm for films fabricated using Dts of 4 cm. UV-VIS spectra suggested the energy band gap (Eg) initially decreased from 1.5 to 1.45 eV, then increased to 1.68 eV as Dts increased from 3.5 to 5 cm. The Hall-effect measurement system revealed that CdTe films prepared with a Dts of 4 cm exhibited optimal electrical properties, and the resistivity, carrier mobility, and carrier concentration were determined to be 2.3 × 105 Ω∙cm, 6.41 cm2∙V−1∙S−1, and 4.22 × 1012 cm−3, respectively.

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Section: Resultsmentioning

confidence: 99%

“…Before the sputtering process, glass substrates were cleaned according to Reference [25]. CdTe (99.9% purity, Dumoers New Materials Inc., Beijing, China) was used as raw target material, and argon (99.99% purity, Niuruide Inc., Wuhan, China) was used as the sputtering gas.…”

Section: Methodsmentioning

confidence: 99%

Regulation of Substrate-Target Distance on the Microstructural, Optical and Electrical Properties of CdTe Films by Magnetron Sputtering

Zhu

et al. 2018

Materials

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“…Sputter power have influence over the surface morphology. Particle size and roughness increases with increase in sputter power [6].…”

Section: 2sputter Deposition Of Mosementioning

confidence: 95%

“…1 The thin film anti-reflection coatings were deposited using several deposition techniques such as dip coating, sol-gel process, blade coating, spin coating, sputter coating, plasma enhanced CVD, electro-spraying and thermal oxide growth. Among them, sputter deposition technique paves the way for the uniform deposition of material over the target surface [6]. Power based materials can be converted into pellets and then employed in the sputter deposition process.…”

Section: Introductionmentioning

confidence: 99%

Utilisation of transition metal chalcogenide MoSe2 as promising antireflective coating for achieving intensified light traption

Santhosh¹,

Rajasekar²,

Gobinath³

et al. 2021

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At present scenario, engineering renewable energy sources with the view of attaining maximum efficiency is more important. The current research focusses on the synthesis and deposition of molybdenum diselenide over solar cell surface for achieving maximum light transmissivity.MoSe2 nanostructures synthesised through hydrothermal method exhibit excellent antireflection property. The developed transition metal chalcogenide is pelletised and sputter coated over solar cell substrate at regular intervals. Coated samples were analysed through various characterisation techniques from which S3 sample exhibited minimum light transmittance and electrical resistivity. The MoSe2 coating with 648 nm thickness reported maximum power conversion efficiency of 19.45 %.

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“…Свойства тонких пленок CdTe зависят от метода их получения. Для синтеза тонких пленок CdTe используются различные технологические методы: метод физического вакуумного напыление [7,8], метод магнетронного распыления [9], метод горячей стенки [10], молекулярно-пучковая эпитаксия [11], металлоорганическое химическое осаждение из газовой фазы [12].…”

Section: Introductionunclassified

Synthesis of cadmium telluride epitaxial films on Al2O3 substrates and their electrophysical properties

Gasanova¹,

Магомедов²

2018

HDSU

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Методом химических транспортных реакций получены однофазные, совершенные по структуре, зеркально-гладкие эпитаксиальные слои теллурида кадмия на подложках сапфира (0001)Аl 2 О 3. Установлено, что оптимальные условия выращивания из паро-газовой фазы совершенных по структуре эпитаксиальные слоев CdTe определяются температурой кристаллизации, величиной пересыщения, а также режимом предварительной обработки поверхности подложек Аl 2 О 3. Получены слои CdTe р-типа проводимости (p=1•10 10-5•10 14 см-3 , µ p = 50-70 см 2 •В-1 •с-1). В результате инверсии проводимости вариацией технологических параметров осаждения получены слои CdTe n-типа проводимости (n=10 13-10 14 см-3 , μ n =610 см 2 В-1 с-1).

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Influence of sputtering power on structural, optical and electrical properties of CdTe thin films prepared by DC magnetron sputtering

Cited by 10 publications

References 38 publications

Regulation of Substrate-Target Distance on the Microstructural, Optical and Electrical Properties of CdTe Films by Magnetron Sputtering

Regulation of Substrate-Target Distance on the Microstructural, Optical and Electrical Properties of CdTe Films by Magnetron Sputtering

Utilisation of transition metal chalcogenide MoSe2 as promising antireflective coating for achieving intensified light traption

Synthesis of cadmium telluride epitaxial films on Al2O3 substrates and their electrophysical properties

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