Influence of sputtering power on composition, structure and electrical properties of RF sputtered CuIn1−Ga Se2 thin films

Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

“…Siebentritt et al [14] and Jiang et al [15] indicated that the preferred orientation of (220)/(204) in CIGS film is beneficial to enhance the property of photovoltaic device. In addition, Yu et al [11] systematically reported the effect of sputtering power on the composition of RF sputtered CIGS films, and clearly showed that the element content of the deposited CIGS films changed with sputtering power. It is noteworthy that sputtering power is the product of sputtering voltage and current.…”

“…In previous studies [2,11], it was found that the deposition parameters of one-step sputtering process can strongly affect the microstructure and composition of the prepared CIGS films. Zhou et al [2] had studied the effects of substrate temperature, working pressure and sputtering power on the crystallinity, grain size, and microstructure of the CIGS films deposited by one-step RF magnetron sputtering, and found an obvious preferred orientation of (220)/(204) at high sputtering power and high working pressure.…”

“…Zhou et al [2] had studied the effects of substrate temperature, working pressure and sputtering power on the crystallinity, grain size, and microstructure of the CIGS films deposited by one-step RF magnetron sputtering, and found an obvious preferred orientation of (220)/(204) at high sputtering power and high working pressure. By the way, previously almost all the CIGS films prepared by one-step sputtering process were random or (112)-oriented [3][4][5][6][7][8][9][10][11][12][13]. Siebentritt et al [14] and Jiang et al [15] indicated that the preferred orientation of (220)/(204) in CIGS film is beneficial to enhance the property of photovoltaic device.…”

“…There are various fabrication methods for CIGS film, where co-evaporation process is a typical method [1]. In recent years, one-step magnetron sputtering process [2][3][4][5][6][7][8][9][10][11][12][13] is developed and presents a potential application in preparing CIGS film. For the one-step sputtering process, a quaternary CIGS ceramic target is directly employed, which is evidently simple in the preparation process of CIGS film.…”

Electron beam irradiation of sputtered Cu–In–Se precursors with double layered structure

“…There are many methods of fabricating CIS solar cells, such as co-evaporation [4], sputtering [5][6][7] and non-vacuum method [8,9]. Among these, many researchers have affirmatively thought that the sputtering method could be a good candidate for industralization because of the feasiblity of large-area production.…”