Influence of sputtered time on the structural and optical characterization of Al-doped ZnO thin films prepared by RF sputtering technique

Ghobadi, Nader; Shiravand, Mahdiyeh; Hatam, Ebrahim Gholami

doi:10.1007/s11082-020-02687-w

Cited by 8 publications

(8 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig 8 indicate the optical band gap for ITM and DITMrespectively, where the values of optical band gap were reduced by enhancing Ar gas pressure[7,8,26,[38][39][40], Table3indicates the obtained results.…”

mentioning

confidence: 87%

“…In this study, in DITM, the evaluated band gap energy for various Ar gas pressure are from 3.23 to 3.32 eV , the increasing of band gap energy can be owing to a corresponding shift in the mean crystallite size which the mean crystallite size affects the optical characteristics obtaining higher band gap energy for thin films with smaller the mean crystallite size. where shows direct allowed transition with changing of Ar gas pressure [21,37,39,40], the calculated results listed in Table 3.…”

Section: -1-3 Atomic Force Microscopy (Afm)mentioning

confidence: 97%

“…Urbach energy is the width of the tail of localized states as for the optical transition between localized tail states in the near to bands the Urbach tail can be obtained from the slope of straight plotting Ln 𝐴(𝑣) versus the incident photon energy [36,38,39,[40][41][42][43] 𝐿𝑛 𝐴(𝑣) = 𝐿𝑛𝐴 0 + ℎ𝑣 𝐸 𝑡𝑎𝑖𝑙 ⁄…”

Section: -2-2 Urbach Energy: Examining the Crystalline Qualitymentioning

confidence: 99%

See 2 more Smart Citations

Influence of Ar gas pressure on the structural and optical properties and surface topography of Al-doped ZnO thin films sputtered by DC-Magnetron sputtering method

Shiravand

Ghobadi²,

Hatam³

2022

Opt Quant Electron

Self Cite

View full text Add to dashboard Cite

In this work, Aluminum doped Zinc oxide thin films were sputtered on glass substrate by the direct current (DC) magnetron sputtering method. The influence of Ar gas pressure on the structural and optical properties was measured. The optical parameters were calculated by UV-Visible spectroscopy, the nature of transition reveals direct allowed transition for the prepared films. Also, some physical quantities such as the strength of electron-phonon interaction, dissipation factor (tan) in the visible region and the lattice dielectric constant were presented for these thin films. The AFM analysis extracts surface parameters of the AZO thin films that help us to investigate the surface analysis with numerical data. The band gap energy and transition index without any presumption about transition natural were calculated from Derivation Ineffective Thickness Method (DITM) and the reaction of Ar gas pressure plays an essential part in controlling the physical quantities of AZO thin films.

show abstract

mentioning

confidence: 87%

Section: -1-3 Atomic Force Microscopy (Afm)mentioning

confidence: 97%

Section: -2-2 Urbach Energy: Examining the Crystalline Qualitymentioning

confidence: 99%

See 1 more Smart Citation

Influence of Ar gas pressure on the structural and optical properties and surface topography of Al-doped ZnO thin films sputtered by DC-Magnetron sputtering method

Shiravand

Ghobadi²,

Hatam³

2022

Opt Quant Electron

Self Cite

View full text Add to dashboard Cite

show abstract

“…In this study, in DITM, the evaluated band gap energy for various Ar gas pressure are from 3.23 to 3.32 eV , the increasing of band gap energy can be owing to a corresponding shift in the mean crystallite size which the mean crystallite size affects the optical characteristics obtaining higher band gap energy for thin films with smaller the mean crystallite size. respectively, where the values of optical band gap were reduced by enhancing Ar gas pressure [7,8,26,[38][39][40], Table 3 indicates the obtained results. where shows direct allowed transition with changing of Ar gas pressure [21,37,39,40], the calculated results listed in Table 3.…”

Section: -2 Optical Measurements 3-2-1 Determination Of Optical Band Gap and The Gap Type (M)mentioning

confidence: 99%

“…respectively, where the values of optical band gap were reduced by enhancing Ar gas pressure [7,8,26,[38][39][40], Table 3 indicates the obtained results. where shows direct allowed transition with changing of Ar gas pressure [21,37,39,40], the calculated results listed in Table 3.…”

Section: -2 Optical Measurements 3-2-1 Determination Of Optical Band Gap and The Gap Type (M)mentioning

confidence: 99%

Influence of Ar Gas Pressure On The Structural And Optical Properties And Surface Topography of Al-Doped ZnO Thin Films Sputtered By DC-Magnetron Sputtering Method

Shiravand

Ghobadi

Hatam

2021

Preprint

Self Cite

View full text Add to dashboard Cite

In this work, Aluminum doped Zinc oxide thin films were sputtered on glass substrate by the direct current (DC) magnetron sputtering method. The influence of Ar gas pressure on the structural and optical properties was measured. The optical parameters were calculated by UV- Visible spectroscopy, the nature of transition reveals direct allowed transition for the prepared films. Also, some physical quantities such as the strength of electron-phonon interaction, dissipation factor (tanδ) in the visible region and the lattice dielectric constant were presented for these thin films. The AFM analysis extracts surface parameters of the AZO thin films that help us to investigate the surface analysis with numerical data. The band gap energy and transition index without any presumption about transition natural were calculated from Derivation Ineffective Thickness Method (DITM) and the reaction of Ar gas pressure plays an essential part in controlling the physical quantities of AZO thin films.

show abstract

Effect of substrate-tilting angle-dependent grain growth and columnar growth in ZnO film deposited using radio frequency (RF) magnetron sputtering method

Sonklin

Dhanunjaya

Leuasoongnoen

et al. 2022

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Influence of sputtered time on the structural and optical characterization of Al-doped ZnO thin films prepared by RF sputtering technique

Cited by 8 publications

References 35 publications

Influence of Ar gas pressure on the structural and optical properties and surface topography of Al-doped ZnO thin films sputtered by DC-Magnetron sputtering method

Influence of Ar gas pressure on the structural and optical properties and surface topography of Al-doped ZnO thin films sputtered by DC-Magnetron sputtering method

Influence of Ar Gas Pressure On The Structural And Optical Properties And Surface Topography of Al-Doped ZnO Thin Films Sputtered By DC-Magnetron Sputtering Method

Effect of substrate-tilting angle-dependent grain growth and columnar growth in ZnO film deposited using radio frequency (RF) magnetron sputtering method

Contact Info

Product

Resources

About