Influence of space-charge on potential barrier in field emission

Nowicki, R.

doi:10.1016/0039-6028(67)90117-3

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…The high trap density in conventional top contacted memory cells may come from both electronic traps generated from electron-beam lithography and also lattice disorders caused by depositing top metal contact (Supplementary Note 14 ). Since the response time of these trap states lag significantly behind of the applied 10–100 ns pulse duration for ultrafast P/E operation, they act as fixed space charges that increase the potential barrier for charge injection 39 . The additional capacitance related to interfacial trap states also tend to reduce the potential drop in MoS 2 , thus counteracts the barrier lowering for hot carrier injection.…”

Section: Resultsmentioning

confidence: 99%

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Yu,

Wang,

Zhuge

et al. 2023

Nat Commun

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As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LixMoS2 as edge contact, we show that ultrafast (10–100 ns) and robust (endurance>106 cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS2 as semiconductor channel. We attribute the superior performance to the gate tunable Schottky barrier at the edge contact, which can facilitate hot carrier injection to the semiconductor channel and subsequent tunneling when compared to a conventional top contact with high density of defects at the metal interface. Our results suggest that contact engineering can become a strategy to further improve the performance of 2D flash memory devices and meet the increasing demands of high speed and reliable data storage.

show abstract

Section: Resultsmentioning

confidence: 99%

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Yu,

Wang,

Zhuge

et al. 2023

Nat Commun

View full text Add to dashboard Cite

show abstract

“…Since the response time of these trap states lag significantly behind of the applied 10-100 ns pulse duration for ultrafast P/E operation, they act as fixed space charges that increase the potential barrier for charge injection. 39 The additional capacitance related to interfacial trap states also tend to reduce the potential drop in MoS2, thus counteracts the barrier lowering for hot carrier injection. In present float gate memory cells, the reduced trap density in edge contact renders highly tunable Schottky barrier under gate modulation (Supplementary information S13), which is essential for hot carrier injection via Schottky emission at the metalsemiconductor interface.…”

Section: Edge Contact Facilitated Charge Tunneling Injection To Float...mentioning

confidence: 99%

Simultaneously Ultrafast and Super-Robust Two-dimensional Flash Memory Enabled by Phase Engineered Edge Contact

Zhai

Wang

et al. 2023

Preprint

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As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the dilemma of ‘speed-retention-endurance’, their typical operation speed is limited ~microseconds to milliseconds for program and erase, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LixMoS2 as edge contact, we show that ultrafast (10-100 ns) and super-robust (endurance>106 cycles, retention>10 years) memory operation can be simultaneously guaranteed in two-dimensional van der Waals heterostructure flash memory with 2H-MoS2 as semiconductor channel. The superior performance stems from the highly gate tunable Schottky barrier at the edge contact, which facilitates hot carrier injection to semiconductor channel and subsequent tunneling if compared to conventional top contact that has rich defects under metal. Our results show the promise of inventing 2D flash memory via contact engineering to further advance the prevailing flash memory technology to meet for the increasing demand of high speed and reliable data storage.

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Field emission from silicon adsorbed on single crystal planes of molybdenum

Collins

Kiwanga

1975

Surface Science

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Influence of space-charge on potential barrier in field emission

Cited by 7 publications

References 5 publications

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Simultaneously Ultrafast and Super-Robust Two-dimensional Flash Memory Enabled by Phase Engineered Edge Contact

Field emission from silicon adsorbed on single crystal planes of molybdenum

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