Influence of Sn doping on ZnO nanostructures from nanoparticles to spindle shape and their photoelectrochemical properties for dye sensitized solar cells

RETRACTED: Preparation and characterization of vertically aligned ZnO microrods on glass substrate

“…ZnO has received considerable attention for its potential optoelectronic applications because of its direct wide-band gap (3.3 eV) and large exciton binding energy (60 meV) at room temperature [3][4][5]. Recently, a variety of techniques have been introduced in order to improve the optical and electrical properties of ZnO based TCOs for its low cost, non-toxicity and high stability in the H 2 plasma atmosphere [6].…”

Effect of boric acid composition on the properties of ZnO thin film nanotubes and the performance of dye-sensitized solar cell (DSSC)

“…The idea behind such doping into the films is to lower down their band gap and consequently improves the performance of the device [3e7]. The examples of metallic doping materials that are widely to be chosen for use in DSSC are stannum doped ZnO [3], indium doped ZnO [4] and cerium doped TiO 2 [5]. The example of non-metallic doped materials are nitrogen doped TiO 2 [6e9], sulfur doped TiO 2 [6] and graphene doped TiO 2 [10].…”

Spin coated (Mx, Zn1-xO), M= Sn, Al nanofibers investigation

“…ZnO is a wide band gap n-type semiconductor, E g =3.3 eV at room temperature, with hexagonal wurtzite structure, and a large exciton binding energy of 60 meV [1][2][3]. In order to improve the physical properties of ZnO, many elements such as aluminum (Al), tin (Sn), indium (In) and fluorine (F) and many others have been used as dopants [1][2][3][4][5]. The synthesis of nanostructures has been of growing interest owing to their promising application in nanoscale optoelectronic devices, like the next generation solar cells [6][7].…”