Influence of Si wall thickness of CsI(Tl) micro-square-frustums on the performance of the structured CsI(Tl) scintillation screen in X-ray imaging

Sun, Zhi‐Wei; Gu, Ming; Liu, Xiaolin; Liu, Bo; Zhang, Juannan; Huang, Shiming; Ni, Chen

doi:10.1038/s41598-022-12673-9

Cited by 3 publications

(1 citation statement)

References 29 publications

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“…Cesium iodide doped with thallium (CsI(Tl)), as a category of X-ray-responsive luminescent materials [1], has been widely used in high-energy physics, non-destructive testing, nuclear medicine, and other fields due to its high scintillation efficiency into visible light, which can be a good match with the spectral sensitivity of Si-based readout arrays (photomultiplier tubes (PMTs) [2][3][4], thin-screen phototransistor (TFT) arrays [5], amorphous Si photodiodes (PDs) [6], complementary metal-oxide semiconductor (CMOS) detectors [7], Si avalanche PDs (APDs) [8], and arrays, or charge-coupled devices (CCDs)) [9] without damaging the Scintillation detectors. As the core component of these instruments, the advantage of CsI(Tl) screens is more pronounced at high spatial resolutions because of the microcrystalline column structures deposited through the vacuum thermal evaporation method, by which the photons can be controlled in the columns reflected by grain boundaries, therefore leading to high spatial resolutions [10,11].…”

Section: Introductionmentioning

confidence: 99%

Effect of Humidity Exposure on Microstructure and Photoluminescence Properties of Polycrystalline CsI(Tl) Screens

Guo,

Jiang,

Tian

et al. 2023

Crystals

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CsI(Tl) scintillation screens have been widely applied in X-ray nondestructive testing (NDT) because of their low cost, high scintillation efficiency, and fluorescence guide columnar microstructures. The effect of humidity exposure on the microstructure and photoluminescence properties of polycrystalline CsI(Tl) screens was investigated in this work. The results indicate that the grain diameter of the columnar microstructure increased with increased exposure time in a humid environment. The degree of anisotropy of polycrystalline screens changed from (211) and (310) to (110) orientation with exposure time. FT-IR Spectra of the exposed screens peaked at 3734 cm−1, 3710 cm−1, 3676 cm−1, 3647 cm−1, 3627 cm−1, 3598 c−1, and 3566 cm−1 due to the symmetrical and asymmetrical stretching vibrations of water molecules. In addition, the photoluminescence properties of exposed screens decreased with increased humidity exposure time due to the deliquescence caused by water molecules. After hours of humidity exposure, the photoluminescence and imaging properties of the screens decrease obviously and tend to reduce slowly. The moisture absorption and deliquescence would directly affect the service reliability and the storage lifetime of polycrystalline CsI(Tl) screens.

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Section: Introductionmentioning

confidence: 99%

Effect of Humidity Exposure on Microstructure and Photoluminescence Properties of Polycrystalline CsI(Tl) Screens

Guo,

Jiang,

Tian

et al. 2023

Crystals

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Structured Cs3Cu2I5 scintillation screen based on oxidized silicon micropore array template for high-resolution X-ray imaging

Teng

Sun

et al. 2023

Journal of Luminescence

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Preparation and performance of a CsI scintillation screen with a double-period structure based on an oxidized silicon micropore array template

Teng,

Gu,

Sun

et al. 2024

Opt. Express

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A structured double-period CsI scintillation screen was successfully developed to improve its detection efficiency based on an oxidized silicon micropore array template with a period value on the order of micro-scale. The structure comprises a main structure along with a sub-structure. The main structure with a period of 8 µm was arranged in a square array consisting of square columnar scintillator units. The micropore walls between the main structure units were purposely fabricated from a SiO2-Si-SiO2 layered structure. The pore walls in commonly used single-structure with a period of 4 µm use the same layered structure composition to obtain a fair comparison. The thickness of both Si and the SiO2 layers was around 0.4 µm. The unique feature of the double structure lies in the even separation of each unit within the main structure into four square columnar scintillator sub-units. These four sub-units within each sub-structure were isolated solely by SiO2 layers with a thickness of approximately 0.8 µm. As a result, the X-ray-induced optical luminescence intensity of the double-structure screen exhibited a 31% increase compared to the corresponding single-structure scintillation screen. In X-ray imaging, a spatial resolution of 109 lp/mm was achieved, which closely matched the results obtained with the single-structure CsI screen. Furthermore, the detective quantum efficiency also displayed a notable improvement.

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Influence of Si wall thickness of CsI(Tl) micro-square-frustums on the performance of the structured CsI(Tl) scintillation screen in X-ray imaging

Cited by 3 publications

References 29 publications

Effect of Humidity Exposure on Microstructure and Photoluminescence Properties of Polycrystalline CsI(Tl) Screens

Effect of Humidity Exposure on Microstructure and Photoluminescence Properties of Polycrystalline CsI(Tl) Screens

Structured Cs3Cu2I5 scintillation screen based on oxidized silicon micropore array template for high-resolution X-ray imaging

Preparation and performance of a CsI scintillation screen with a double-period structure based on an oxidized silicon micropore array template

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