Influence of separate confinement heterostructures on the effective carrier recombination coefficient in quantum well laser structures

Yamamoto, Tsuyoshi; Odagawa, T.; Tanaka, Kazuhiro; Ogita, S.

doi:10.1063/1.119960

Cited by 5 publications

(1 citation statement)

References 14 publications

(20 reference statements)

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“…More difficult to account for is the distribution of carriers in the barrier and SCH regions. These carriers have a much longer lifetime due to the reduced carrier density in these regions and, therefore, affect the measured carrier lifetime and extracted recombination parameters [9]- [11].…”

Section: Introductionmentioning

confidence: 99%

Carrier lifetime and recombination in long-wavelength quantum-well lasers

Pikal

Menoni²,

Temkin³

et al. 1999

IEEE J. Select. Topics Quantum Electron.

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Abstract-We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses information obtained from the measured spontaneous emission spectra to correct the measured lifetime and obtain the intrinsic well lifetime. Once the intrinsic well lifetime is obtained, the intrinsic well recombination coefficients can also be obtained. We show that the carrier population in the barrier/SCH layers can significantly affect the measured carrier lifetime and the extracted recombination coefficients. We also show that this analysis yields transparency carrier density and differential gain numbers which are very different from those obtained with the traditional analysis and much closer to what is predicted for highly strained QW lasers. These differences indicate the importance of accounting for barrier/SCH carriers on the measurement of basic QW laser material properties.

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Section: Introductionmentioning

confidence: 99%

Carrier lifetime and recombination in long-wavelength quantum-well lasers

Pikal

Menoni²,

Temkin³

et al. 1999

IEEE J. Select. Topics Quantum Electron.

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Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers

Pikal

Menoni

Thiagarajan

et al. 2000

Applied Physics Letters

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In this letter, we report on the temperature dependence of the intrinsic recombination coefficients in long-wavelength quantum-well lasers. Unlike previous studies, we obtain the intrinsic recombination coefficients from carrier lifetime measurements with a correction for the carrier population in the barrier and separate confinement heterostructure region. Our results show that this carrier population not only affects the value of the recombination coefficients obtained but also their temperature dependence. We measure a significant increase in the intrinsic Auger coefficient with temperature indicating that the frequently reported temperature insensitivity of this coefficient is likely due to carriers spilling out of the wells at elevated temperatures and not an intrinsic property of the Auger process.

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Microstructure and initial growth characteristics of nanocrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4

Xiang

Huang

Song

et al. 2010

Journal of Applied Physics

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Nanocrystalline silicon (nc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. It is found that at early growth stage the initial amorphous incubation layer in nc-Si:H growth on silicon oxide can be almost eliminated and crystallites with diameter of about 6 to 10 nm are directly formed on the silicon oxide. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. It is considered that highly H2 dilution and higher excitation frequency are the main reason for eliminating the initial amorphous incubation layer in nc-Si:H growth on silicon oxide.

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Influence of separate confinement heterostructures on the effective carrier recombination coefficient in quantum well laser structures

Cited by 5 publications

References 14 publications

Carrier lifetime and recombination in long-wavelength quantum-well lasers

Carrier lifetime and recombination in long-wavelength quantum-well lasers

Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers

Microstructure and initial growth characteristics of nanocrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4

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