Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers

Abstract

In this letter, we report on the temperature dependence of the intrinsic recombination coefficients in long-wavelength quantum-well lasers. Unlike previous studies, we obtain the intrinsic recombination coefficients from carrier lifetime measurements with a correction for the carrier population in the barrier and separate confinement heterostructure region. Our results show that this carrier population not only affects the value of the recombination coefficients obtained but also their temperature dependence. We measure a significant increase in the intrinsic Auger coefficient with temperature indicating that the frequently reported temperature insensitivity of this coefficient is likely due to carriers spilling out of the wells at elevated temperatures and not an intrinsic property of the Auger process.

Improvement in the frequency response of 1.3-μm buried heterostructure InAsP lasers

“…The condition cap esc τ τ / < 1 results from a combination of band-filling and reduced electron confinement. This condition was also obtained below threshold by measuring the spontaneous emission from the well and barrier, as ratio of the effective thermionic emission to capture is equal to the total number of carriers in the well and the total number of carriers in the barrier/separate confinement region [8,9].…”

Dynamical behavior of quantum-dot laser

“…(6). As temperature increases so does ( [2].The effects of B, current injection density(j) and temperature are shown in Fig (8). Fig ( 9) summarizes the effect of injection current on different parameters affecting the dynamics of QD laser via the effect of j(t) on temperature.…”

Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

“…They extract an activation energy of 40 meV from their calculations. On the other hand, parameter extractions done from either current measurements or carrier lifetime characterizations suggest activation energies up to 140 [9] and 180 meV [5]. These two values result in Auger coefficients being different by a factor larger than three between 300 K and 400 K. This introduces another considerable uncertainty in the Auger parameter for elevated temperatures.…”

“…For the Auger coefficients, room-temperature values between 1-5 10 cm /s are reported for this wavelength [5], [17]- [19]. Their temperature dependence is an even more controversial issue.…”