Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Abstract

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

Self‐Repairing Tin‐Based Perovskite Solar Cells with a Breakthrough Efficiency Over 11%

“…[41] Compared to V oc , the lower V bi should be attributed to the presence of charged ions and/or high doping at the interface. [42] Based on the aforementioned analysis, we summarize the working mechanism of PHCl as an SRTSP. Sn 2+ can be easily oxidized to Sn 4+ in conventional Sn-based perovskites.…”

Low-temperature carbon-based electrodes in perovskite solar cells

“…In fact, simulations by Minemoto and Murata have shown that if the electrode work function is similar to the valence band of the perovskite, the built-in voltage can be equally high with or without HSL material. 207,208 In addition to improving the conductivity, doping (e.g. by boron) was found to alter the work-function of the carbonbased layer (Fig.…”

Utilization of Temperature-Sweeping Capacitive Techniques to Evaluate Band Gap Defect Densities in Photovoltaic Perovskites

“…37 Since mobile defects coexist with fixed impurities, application of pre-bias before capacitance measurement may alter the ionic distribution and the corresponding MS curve, as shown in Figure 1c. However, the effect does not persist and the solar cell relaxes to the initial situation in which the MS analysis is not Figure 1b as accurate values in PSCs, [38][39][40][41][42][43][44][45] what could be useful is to perform qualitative relative comparisons checking changes in the apparent bi V . 46 In this case it should be noticed that the exponential increase of capacitance at forward bias (see Figure 1a,b right axes) is related with the approaching and exceeding of the flat-band potential and the consequent going to the high injection current regime.…”