Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors

Yang, Ming; Lin, Zhaojun; Zhao, Jun; Wang, Yutang; Li, Zhiyuan; Lv, Yuanjie; Feng, Zhihong

doi:10.1016/j.spmi.2015.05.020

Cited by 10 publications

(4 citation statements)

References 24 publications

(17 reference statements)

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“…Compared with the HEMT, the SPD exhibits that the E 2h mode of GaN shows a blue shift from 566.8 to 569.2 cm −1 . It reveals that the etching process induces a tensile strain relaxation of the GaN layer 30 . The lattice mismatch between III-nitrides and silicon substrate can lead to a high tensile strain.…”

Section: Resultsmentioning

confidence: 97%

Strain-controlled power devices as inspired by human reflex

Zhang

Zhou

et al. 2020

Nat Commun

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Bioinspired electronics are rapidly promoting advances in artificial intelligence. Emerging AI applications, e.g., autopilot and robotics, increasingly spur the development of power devices with new forms. Here, we present a strain-controlled power device that can directly modulate the output power responses to external strain at a rapid speed, as inspired by human reflex. By using the cantilever-structured AlGaN/AlN/GaN-based high electron mobility transistor, the device can control significant output power modulation (2.30-2.72 × 10 3 W cm −2) with weak mechanical stimuli (0-16 mN) at a gate bias of 1 V. We further demonstrate the acceleration-feedback-controlled power application, and prove that the output power can be effectively adjusted at real-time in response to acceleration changes, i.e., ▵P of 72.78-132.89 W cm −2 at an acceleration of 1-5 G at a supply voltage of 15 V. Looking forward, the device will have great significance in a wide range of AI applications, including autopilot, robotics, and human-machine interfaces.

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Section: Resultsmentioning

confidence: 97%

Strain-controlled power devices as inspired by human reflex

Zhang

Zhou

et al. 2020

Nat Commun

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“…In order to better understand the specific advantages of the dry etching process for thinning substrate, we compared three different substrate-thinning processes, such as chemical mechanical polishing (CMP) [25][26][27], wet corrosion [28], and dry etching [6,19,29]. Among them, the CMP will cause the substrate to produce unrecoverable deformation and introduce new residual stress; the wet corrosion is commonly isotropic, and the corrosion rate is not controllable.…”

Section: Resultsmentioning

confidence: 99%

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Cui

Chen

et al. 2021

Nanotechnology

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AlGaN/GaN heterojunction-based high-electron-mobility transistors (HEMTs) have significant advantages of high carrier concentration, high electron mobility, and large breakdown voltage, and show promising potential as power devices. Being widely used in semiconductor manufacturing, dry etching process is capable of fabricating microstructures and thinning substrate from backside, which is good for developing flexible devices. Here, we investigate the effect of backside dry etching of Si substrate on the physical and electrical properties of AlGaN/GaN HEMTs. The physical properties were characterized by scanning electron microscope, Raman spectra, and x-ray diffraction (XRD). After the dry etching process, the peak red-shift of GaN E 2 mode indicates an increase of tensile stress, and the XRD rocking curve of GaN film shows to a certain extent decreased dislocation density. Furthermore, the maximum saturation current density and maximum transconductance of the HEMTs are improved by 21.1% and 25.5%, respectively. The approach of backside dry etching for thinning Si substrate would contribute to the optimization of GaN heterojunction-based devices, and also provide inspirations for the development of flexible and robust power devices.

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“…The MPD exhibits that the E 2h phonon mode of GaN shows a blue shift from 568.31 cm −1 to 569.33 cm −1 compared with the HEMT, which reveals that the dry etching process releases the silicon substrate and relaxes the tensile strain of the GaN layer. [33,41] The alleviation of the tensile strain of the GaN layer will partially weaken the piezoelectric polarization effect of the GaN layer, thereby reducing the 2DEG concentration in the AlGaN/AlN/GaN heterojunction. The relationship between the biaxial stress and the shift of the Raman phonon frequency is shown in Equation (1).…”

Section: The Design and Performance Of Mpdmentioning

confidence: 99%

Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics

Zhou

Hua

Sha

et al. 2023

Adv Elect Materials

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The advances in biological magnetoreception and microelectronics have promoted the vigorous development of interactive electronic devices capable of noncontact interaction and control via magnetic fields. Here, a magnetosensory power device (MPD) that integrates a magnetic film ((Fe90Co10)78Si12B10) unit into a cantilever‐structured AlGaN/GaN‐based high‐electron‐mobility‐transistor is presented. The MPD is capable to not only sense external magnetic field, but also control device output power with the emulation of magnetoreception. Specifically, the device can achieve significant control of output power density (18.04 to 18.94 W mm−2) quasi‐linearly with magnetic field stimuli (0–400 mT) at a gate bias of −5 V. In addition, the maximum output power density of the MPD can reach 85.8 W mm−2 when a gate bias of 1 V is applied. The simulation and experimental results show that MPD has excellent orientation and magnetic field sensing functions under 0–400 mT magnetic fields. With the intelligent capabilities of magnetic sense and output power control, such interactive electronic devices will have broad application prospects in the fields of artificial intelligence, advanced robotics, and human‐machine interfaces.

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Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors

Cited by 10 publications

References 24 publications

Strain-controlled power devices as inspired by human reflex

Strain-controlled power devices as inspired by human reflex

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for Interactive Electronics

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