Influence of RF power on the electrical and mechanical properties of nano-structured carbon nitride thin films deposited by RF magnetron sputtering

Banerjee, Indrani; Kumari, Neelam; Singh, Ashis K.; Kumar, Mukesh; Laha, Pinaki; Panda, Alaka; Pabi, S.K.; Barhai, P.K.; Mahapatra, S. K.

doi:10.1016/j.tsf.2010.05.002

Cited by 11 publications

(7 citation statements)

References 31 publications

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“…These includes electron cyclotron resonance microwave plasma chemical vapor deposition [7], rf magnetron sputtering, [8], graphite hollow cathode system [9], hollow cathode discharge [10], and radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) [11]. Among these rf PECVD is favoured since this technique has the advantage of uniform large area deposition, easy handling, low pinhole density, good adhesion and good step coverage [11].…”

Section: Introductionmentioning

confidence: 99%

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Aziz¹,

Ritikos²,

Kamal³

et al. 2013

AIP Conference Proceedings

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Structural and electronic properties of electron cyclotron resonance plasma deposited hydrogenated amorphous carbon and carbon nitride films Journal of Applied Physics 91, 4154 (2002) Abstract. Amorphous carbon nitride (a-CN x ) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CN x thin films were prepared using pure methane (CH 4 ) gas diluted with nitrogen (N 2 ) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. These films were then annealed at 400 o C in a quartz tube furnace in argon (Ar) gas. The effects of rf power and thermal annealing on the chemical bonding and morphology of these samples were studied. Surface profilometer was used to measure film thickness. Fourier transform infra-red spectroscopy (FTIR) and Field emission scanning electron microscopy (FESEM) measurements were used to determine their chemical bonding and morphology respectively. The deposition rate of the films increased constantly with increasing rf power up to 80W, before decreasing with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks included C-N, C=N, C=C and C≡N triple bond. C=N and C≡N bonds decreased with increased C-N bonds after thermal annealing process. The FESEM images showed that the structure is porous for as-deposited and covered by granule-like grain structure after thermal annealing process was done. The resistance of the a-CN x thin film changed from 23.765 kΩ to 5.845 kΩ in the relative humidity range of 5 to 92 % and the film shows a good response and repeatability as a humidity sensing materials. This work showed that rf power and thermal annealing has significant effects on the chemical bonding and surface morphology of the a-CN x films and but yield films which are potential candidate as humidity sensor device.

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Section: Introductionmentioning

confidence: 99%

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Aziz¹,

Ritikos²,

Kamal³

et al. 2013

AIP Conference Proceedings

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show abstract

“…a-CN x thin films were deposited by rf-PECVD using a mixture of pure (99.999 %) methane, CH 4 and nitrogen, N 2 gas. The type of substrates used in this study was p-type (111) silicon chemically cleaned using acetone and deionized water in ultrasonic baths prior to deposition.…”

Section: Methodsmentioning

confidence: 99%

“…When the rf power exceeds 80W, CH 4 , main precursor gas is completed dissociation resulting in the saturated of available radicals and consequently the deposition rate [8]. Normally the radicals formed would react with unreacted molecules in secondary reactions in the plasma.…”

Section: Deposition Rate Of A-cn X Thin Filmsmentioning

confidence: 99%

“…Raman spectra deconvoluted Gaussian and Lorentz fitting 4. Conclusion a-CN x films were succesfully deposited using a home-built rf-PECVD from the discharge of CH 4 and N 2 gas mixture. The variation of chemical bondingof these a-CN x films as a function of rf powerwas studied.…”

Section: Raman Analysis Of A-cn X Thin Filmsmentioning

confidence: 99%

“…These includes rf magnetron sputtering, [4], hollow cathode discharge [5], electron cyclotron resonance microwave plasma chemical vapor deposition [6], graphite hollow cathode system [7] and radio frequency plasma enhanced chemical vapor deposition (rf-PECVD). Among these rf-PECVD is favoured since this technique has the advantage of uniform large area deposition, easy handling, low pinhole density, good adhesion and good step coverage [8].…”

Section: Introductionmentioning

confidence: 99%

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Optimizing rf Power for Preferential C≡N Bond Formation in a-CN_x Thin Films Prepared by rf-PECVD Technique

Aziz

Ritikos

Kamal

et al. 2013

J. Phys.: Conf. Ser.

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Polymeres graphitisches Kohlenstoffnitrid als heterogener Organokatalysator: von der Photochemie über die Vielzweckkatalyse hin zur nachhaltigen Chemie

2011

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Polymere graphitische Kohlenstoffnitrid‐Materialien (vereinfacht g‐C3N4), die nur aus C, N und Spuren von H bestehen, sind in den letzten Jahren wieder verstärkt in das Zentrum des Interesses gerückt, wohl auch wegen der Ähnlichkeit zu Graphit. g‐C3N4 ist anders als Graphit ein Halbleiter mit mittlerer Bandlücke und damit ein effektiver (Photo)‐Katalysator für eine ganze Reihe von Reaktionen. In diesem Aufsatz beschreiben wir die “Polymerchemie” des synthetischen Aufbaus, wie die Bandlagen und die Bandlücke durch Copolymerisation und Dotierung verändert werden können und wie Änderungen der Festkörpertextur die Effektivität dieses heterogenen Organokatalysators verbessern können. g‐C3N4 und seine Modifikationen zeigen eine sehr hohe thermische und chemische Stabilität und katalysieren eine ganze Reihe von “Traumreaktionen”, wie die photochemische Spaltung von Wasser, milde und selektive Oxidationsreaktionen, oder – als coaktiver Katalysatorträger – superschnelle Hydrierungen. Da Kohlenstoffnitrid metallfrei ist, toleriert es funktionelle Gruppen und ist daher für Vielzweckanwendungen in der Umwandlung von Biomasse und in der nachhaltigen Chemie geeignet.

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Influence of RF power on the electrical and mechanical properties of nano-structured carbon nitride thin films deposited by RF magnetron sputtering

Cited by 11 publications

References 31 publications

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Optimizing rf Power for Preferential C≡N Bond Formation in a-CN_x Thin Films Prepared by rf-PECVD Technique

Polymeres graphitisches Kohlenstoffnitrid als heterogener Organokatalysator: von der Photochemie über die Vielzweckkatalyse hin zur nachhaltigen Chemie

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Influence of RF power on the electrical and mechanical properties of nano-structured carbon nitride thin films deposited by RF magnetron sputtering

Cited by 11 publications

References 31 publications

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Optimizing rf Power for Preferential C≡N Bond Formation in a-CNx Thin Films Prepared by rf-PECVD Technique

Polymeres graphitisches Kohlenstoffnitrid als heterogener Organokatalysator: von der Photochemie über die Vielzweckkatalyse hin zur nachhaltigen Chemie

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Optimizing rf Power for Preferential C≡N Bond Formation in a-CN_x Thin Films Prepared by rf-PECVD Technique