Influence of residual stress on the determination of Young’s modulus for SiO<sub>2</sub> thin film by the surface acoustic waves

Qin, Huiquan; Xiao, Xia; Sui, Xiaole; Qi, Haiyang

doi:10.7567/1347-4065/ab1a28

Cited by 4 publications

(3 citation statements)

References 27 publications

(30 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Amorphous SiO 2 thin films are widely used as dielectric material in the manufacture of integrated circuits, so the study of its residual stress is of representative significance. This paper is an extension of our previous research, in which the experimental details are described [27]. In this work, the residual stress of nanostructured SiO 2 films with different thickness from 100 to 2000 nm are quantitatively measured by the laser-generated SAW method.…”

Section: Introductionmentioning

confidence: 94%

Quantitative and nondestructive determination of residual stress for SiO₂ thin film by laser-generated surface acoustic wave technique

Zhang¹,

Xiao²,

Qi³

et al. 2022

Meas. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The laser-generated surface acoustic wave (SAW) technique is a promising method to measure the mechanical properties of thin films quickly and nondestructively. Residual stress is inevitable during the processing and manufacturing of integrated circuits, which will have a major impact on the physical and mechanical properties of the thin film materials and cause deterioration to the structural strength. In this study, the SAW technique based method is proposed for quantitative and nondestructive measuring the residual stress in the nanostructured films. The method is verified by the experiment measuring the SiO2 films in the thickness range of 100 to 2000 nm. The experimental procedures, including signal excitation, reception and processing, are described in detail. By matching the SAW experimental dispersion curve with the calculated theoretical dispersion curve containing the residual stress, the residual stress of the SiO2 films along [110] and [100] crystallographic orientation of the Si wafer is successfully quantified. The determination results are ranged from -65.5 to 421.1 MPa and the stress value increases as the film thickness decreases, revealing the residual stress of the SiO2 film is compressive. Meanwhile, the conventional substrate curvature method as a comparison is used to verify the correctness and feasibility of the proposed SAW method for the residual stress determination.

show abstract

Section: Introductionmentioning

confidence: 94%

Quantitative and nondestructive determination of residual stress for SiO₂ thin film by laser-generated surface acoustic wave technique

Zhang¹,

Xiao²,

Qi³

et al. 2022

Meas. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…By analyzing the SAW dispersion curve, the unknown parameters of the film can be determined. [12][13][14] Various methods have been applied to excite Rayleigh-type SAW, among which electronic microdevices reliant on SAW propagation have been notably popular for their low manufacturing expenditure and high frequency. [15][16][17] SAW-based devices, which utilize interdigital transducers (IDT) to generate ultrasonic waves in piezoelectric crystals, find wide application in electronic equipment.…”

Section: Introductionmentioning

confidence: 99%

Simultaneous Determination of Young's Modulus and Density of Ultrathin Low‐k Films Using Surface Acoustic Waves

Zhang,

Xiao,

Zhang

et al. 2024

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

The nondestructive testing (NDT) of mechanical properties in ultrathin low dielectric constant (low‐k) films is a major challenge in integrated circuit manufacturing. Young's modulus and density are closely related parameters for low‐k films. This study presents a method for NDT of Young's modulus and density of porous low‐k black diamond (SiOC:H, BD) films. A linear frequency modulation (LFM) surface acoustic wave (SAW) interdigital transducer (IDT) with a frequency range of 20–250 MHz is designed to generate SAW signals on the samples. The series of SAW waveforms obtained on the samples are processed to obtain experimental SAW dispersion curves across a broad frequency range. By comparing these experimental curves with theoretical dispersion curves, as well as their first‐order derivatives, Young's modulus and density of porous low‐k BD films with thicknesses of 100, 300, 500, and 1000 nm are characterized. To verify Young's modulus measurements from the SAW method, a control experiment using nanoindentation is conducted. The results demonstrate that the SAW method can reduce the impact of the substrate and is independent of the film thickness. This study presents a highly accurate measuring method for simultaneous multiparameter evaluation of ultra‐thin low‐k films.

show abstract

“…The mechanical behavior of the SiO 2 thin films has been studied by some researchers. Qin et al [32] studied the influence of residual stress on the Young's modulus determination for SiO 2 thin film by the surface acoustic waves (SAWs), indicating which indicated that the influence of residual stress on the determination for SiO 2 thin film by SAWs is small, and it can be ignored or revised. Rakshit et al [33] measured in situ the stress evolution in SiO 2 thin films in situ during electrochemical lithiation/delithiation cycling by monitoring the substrate curvature using a multi-beam optical sensing method, finding that upon lithiation, SiO 2 undergoes extensive inelastic deformation, with a peak compressive stress of 3.1 GPa, and upon delithiation the stress becomes tensile, with a peak stress of 0.7 GPa.…”

Section: Introductionmentioning

confidence: 99%

Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Zhang

Xing

et al. 2020

Coatings

View full text Add to dashboard Cite

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

show abstract

Influence of residual stress on the determination of Young’s modulus for SiO₂ thin film by the surface acoustic waves

Cited by 4 publications

References 27 publications

Quantitative and nondestructive determination of residual stress for SiO₂ thin film by laser-generated surface acoustic wave technique

Quantitative and nondestructive determination of residual stress for SiO₂ thin film by laser-generated surface acoustic wave technique

Simultaneous Determination of Young's Modulus and Density of Ultrathin Low‐k Films Using Surface Acoustic Waves

Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Contact Info

Product

Resources

About

Influence of residual stress on the determination of Young’s modulus for SiO2 thin film by the surface acoustic waves

Cited by 4 publications

References 27 publications

Quantitative and nondestructive determination of residual stress for SiO2 thin film by laser-generated surface acoustic wave technique

Quantitative and nondestructive determination of residual stress for SiO2 thin film by laser-generated surface acoustic wave technique

Simultaneous Determination of Young's Modulus and Density of Ultrathin Low‐k Films Using Surface Acoustic Waves

Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Contact Info

Product

Resources

About

Influence of residual stress on the determination of Young’s modulus for SiO₂ thin film by the surface acoustic waves

Quantitative and nondestructive determination of residual stress for SiO₂ thin film by laser-generated surface acoustic wave technique

Quantitative and nondestructive determination of residual stress for SiO₂ thin film by laser-generated surface acoustic wave technique