Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Schaepkens, M.; Bosch, Rcm Roeland; Standaert, T. E. F. M.; Oehrlein, G. S.; Cook, J. M.

doi:10.1116/1.581316

Cited by 99 publications

(35 citation statements)

References 20 publications

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“…After a 20 min chamber 'seasoning' with an ICP P = 1400W, we noticed that the temperature meter, attached to the outside of the thick chamber walls can rise greater than 134°C (the chamber heater's thermo-couple set point is 130°C). It has been observed that the loss of fluorocarbon species to the chamber walls is reduced as the wall temperature is increased, resulting in more polymer deposition onto the wafer (Schaepkens et al, 1998). This makes sense with our data, as we show more fluorocarbon deposition on the wafer with hotter chamber walls.…”

Section: A Bsupporting

confidence: 84%

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Batch Fabrication of High‐Performance Planar Patch‐Clamp Devices in Quartz

Nagarah¹,

Paek²,

Luo³

et al. 2010

Advanced Materials

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Section: A Bsupporting

confidence: 84%

“…Patterns in the nickel masking film were transferred into the SiO 2 with an Advanced Oxide Etcher (Surface Technology Systems, PLC, Newport, UK). Before etching HAR structures, we cleaned the etching chamber with an O 2 plasma, and then 'seasoned' the chamber with the etching recipe on a blank Si wafer for 20 minutes [1]. See Table S …”

mentioning

confidence: 99%

Batch Fabrication of High‐Performance Planar Patch‐Clamp Devices in Quartz

Nagarah¹,

Paek²,

Luo³

et al. 2010

Advanced Materials

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“…3,[138][139][140][141] One important difference between ALD systems and ALE systems is the overall energy content of ALE systems, in particular if plasma is used continuously Figure 11. Review of literature data of physical sputter rates for SiO 2 versus the square-root of Ar ion energy up to energies of 400 eV.…”

Section: Issues and Needsmentioning

confidence: 99%

Atomic Layer Etching at the Tipping Point: An Overview

Oehrlein

Metzler

2015

ECS J. Solid State Sci. Technol.

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223

162

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The ability to achieve near-atomic precision in etching different materials when transferring lithographically defined templates is a requirement of increasing importance for nanoscale structure fabrication in the semiconductor and related industries. The use of ultra-thin gate dielectrics, ultra thin channels, and sub-20 nm film thicknesses in field effect transistors and other devices requires near-atomic scale etching control and selectivity. There is an emerging consensus that as critical dimensions approach the sub-10 nm scale, the need for an etching method corresponding to Atomic Layer Deposition (ALD), i.e. Atomic Layer Etching (ALE), has become essential, and that the more than 30-year quest to complement/replace continuous directional plasma etching (PE) methods for critical applications by a sequence of individual, self-limited surface reaction steps has reached a crucial stage. A key advantage of this approach relative to continuous PE is that it enables optimization of the individual steps with regard to reactant adsorption, self-limited etching, selectivity relative to other materials, and damage of critical surface layers. In this overview we present basic approaches to ALE of materials, discuss similarities/crucial differences relative to thermal and plasma-enhanced ALD, and then review selected results on ALE of materials aimed at pattern transfer. The overview concludes with a discussion of opportunities and challenges ahead. A requirement of increasing importance for nanoscale device fabrication is the ability to achieve atomic scale etching control and materials selectivity during pattern transfer.1-8 An etching method corresponding to Atomic Layer Deposition (ALD), i.e. Atomic Layer Etching (ALE), is expected to satisfy these needs as critical dimensions continue to shrink below the 10 nm scale.Demonstrations of self-limited dry etching methods capable of near-atomic resolution have a long history in the dry etching community and a brief review will be presented below. Key challenges for these approaches have been specialized equipment, long process times and low throughput.9,10 However, a recent demonstration using a commercial plasma etch tool 10 and activities within the dry etching community 11 provide indications that the situation has changed, and that we may have reached for ALE the Tipping Point which Gladwell defined as the "the moment of critical mass, the threshold, the boiling point" when "ideas and products and messages and behaviors spread like viruses do".12 This is due to several factors, including unprecedented demands on dry etching technology introduced by the semiconductor device evolution according to Moore's law that can be satisfied by atomic layer etching, advanced capabilities in plasma etch, and the existence of a critical level of information on plasma etch and ALD methods as applied in the semiconductor fabrication space.In this article we will provide a review of background of these approaches, and focus on issues that have to be overcome for widespread implement...

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“…In a detailed surface model proposed by Gogolieds and Vauvert 14 , etching and deposition are taken into account for using a generalized concept for "polymer surface coverage" which is found to be equivalent to a normalized fluorocarbon film thickness covering the etched surface. In works done by Schweppes and Oehrlein [15][16][17][18][19] , nearly all the parameters of the ICP equipment and plasma that probably affect the etching process have been studied.…”

Section: Introductionmentioning

confidence: 99%

Etching analysis of inductively coupled plasma technology for fabrication of micro-optical elements

Wang

Zhou

et al. 2005

SPIE Proceedings

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Inductively coupled plasma (ICP) technology is a new advanced version of dry-etching technology compared with the widely used method of Reactive Ion Etching (RIE). Extensive experiments have been done successfully and the fabrication results of microoptical elements have proved that the new ICP technology is very effective in dry etching field. Plasma processing of the ICP technology is complicated due to the mixed reactions among discharge physics, chemistry and surface chemistry. Existing models concentrate only on part of the whole problem, for example, on plasma physics, or on chemistry reactions. Despite the efforts to understand and model the etching process, simulation of the surface phenomena with accurate and general model coefficients is still lacking. Need for a simulation is even greater when high-density plasma methods such as inductively coupled plasma (ICP) technology are used due to strong polymer deposition effects. In the paper we analyze the physical reactions and chemical reactions that may occur in the chamber in detail, and a surface dynamic model is used to explain the complex reactions occurring in the reaction chamber. At last, we present an experiment that demonstrates the applicability of the surface dynamic model theory very well. The surface dynamic model of the ICP technology presented in this paper provides us a theory basis so that we can take effective measures to control the etching process of ICP technology and to improve the etching quality of microoptical elements greatly.

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Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

Cited by 99 publications

References 20 publications

Batch Fabrication of High‐Performance Planar Patch‐Clamp Devices in Quartz

Batch Fabrication of High‐Performance Planar Patch‐Clamp Devices in Quartz

Atomic Layer Etching at the Tipping Point: An Overview

Etching analysis of inductively coupled plasma technology for fabrication of micro-optical elements

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