Influence of properties of Si&lt;inf&gt;3&lt;/inf&gt;N&lt;inf&gt;4&lt;/inf&gt; passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

Iucolano, Ferdinando; Miccoli, Cristina; Nicotra, M.; Stocco, Antonio; Rampazzo, F.; Zanandrea, A.; Cinnera, Martino V.; Patti, Alfonso; Rinaudo, Salvatore; Soci, Fabio; Chini, Alessandro; Zanoni, Enrico; Meneghesso, Gaudenzio

doi:10.1109/wipda.2013.6695587

Cited by 7 publications

(2 citation statements)

References 6 publications

(5 reference statements)

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“…The 50 nmthick SiO2 layer was deposited by plasma enhanced chemical vapor deposition (PECVD) by using a tetraethyl orthosilicate precursor, followed by a thermal annealing at 850 °C in N2 [21]. Gate contacts were evaporated on the SiO2 by using Ni-based metals [30].…”

Section: Methodsmentioning

confidence: 99%

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Acurio

Crupi

Magnone

et al. 2017

Solid-State Electronics

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This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps. The trapping rate exhibits a universal decreasing behavior as a function of the number of filled traps, independently of stress time, stress voltage, stress temperature, and device-to-device variability. The stress-induced ΔVth can be fully recovered by applying a small negative voltage, which causes the electron de-trapping. In the explored time window (between 1 s and thousands of s), the recovery dynamics is well described by the superimposition of two exponential functions associated with two different traps. Both trap time constants are independent of the stress voltage, decrease with temperature and increase with the recovery voltage. The activation energy of the slower trap is 0.93 eV, while the faster trap exhibits an activation energy with a large spread in the range between 0.45 eV and 0.82 eV

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Section: Methodsmentioning

confidence: 99%

On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT

Acurio

Crupi

Magnone

et al. 2017

Solid-State Electronics

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“…The ohmic contacts were formed by Ti/Al-based metallization, while Nibased were used for the gate contact. Details on the ohmic and gate contacts formation can be found in [19] and [20], respectively. The AlGaN layer was recessed using a dry etch process in a chlorine-based chemistry.…”

Section: Methodsmentioning

confidence: 99%

Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs

Crupi

Magnone

Strangio

et al. 2016

IEEE Trans. Electron Devices

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In this paper, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-HEMTs. Pulsed I-V characteristics and low-frequency-noise measurements are the characterization vehicles used to get a direct insight of the device trap-states. By considering a set of 10 samples, device-to-device fluctuation parameters extracted from trap-related measurements (1/f noise and gate bias instability) are systematically compared with conventional electrical parameters (threshold voltage and on-current). Two separate trends are identified and ascribed to two different trap families.

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