Influence of Pressure on Silicon Nanowire Growth Kinetics

Zhao, Huaizhou; Zhou, Sa; Hasanali, Zainul; Wang, Dunwei

doi:10.1021/jp8000256

Cited by 20 publications

(18 citation statements)

References 20 publications

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“…The dependence on P Total will depend on how the P s varies with P Total as observed by Zhao et al 31 Growth rate has been experimentally observed to vary parabolically and linearly with P Total in both confined, i.e., within templates and non-confined cases. 5,14,31…”

Section: Pressure Dependencementioning

confidence: 82%

Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

Shakthivel

Raghavan

2012

Journal of Applied Physics

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Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching J. Appl. Phys. 112, 073509 (2012) High temperature finite-size effects in the magnetic properties of Ni nanowires J. Appl. Phys. 112, 073906 (2012) Propagation of light in serially coupled plasmonic nanowire dimer: Geometry dependence and polarization control Appl. Phys. Lett. 101, 111111 (2012) On-chip fabrication of ultrasensitive NO2 sensors based on silicon nanowires Appl. Phys. Lett. 101, 103101 (2012) Morphology and electrical properties of high aspect ratio ZnO nanowires grown by hydrothermal method without repeated batch process

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Section: Pressure Dependencementioning

confidence: 82%

Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

Shakthivel

Raghavan

2012

Journal of Applied Physics

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“…The reaction was performed at 475 °C with 60 sccm (standard cubic centimeters per minute) of SiH 4 gas fl ow (10% in He, Airgas) and 30 sccm of H 2 co-fl ow. To achieve different growth kinetics, the pressure was varied from 5 to 50 Torr [12].…”

Section: Sinws Growthmentioning

confidence: 99%

“…Next, we turned our attention to the growth kinetics. We recently reported that the growth rate of SiNWs is sensitive to the total pressure [12]. Based on this control of growth, we systematically studied the microstructures of SiNWs grown under different rates, from as slow as ~20 nm/min to as fast as ~1300 nm/min (Fig.…”

Section: Nano Researchmentioning

confidence: 99%

Kinetically-induced hexagonality in chemically grown silicon nanowires

Liu

Wang

2009

Nano Res.

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Various silicon crystal structures with different atomic arrangements from that of diamond have been observed in chemically synthesized nanowires. The structures are typified by mixed stacking mismatches of closely packed Si dimers. Instead of viewing them as defects, we defi ne the concept of hexagonality and describe these structures as Si polymorphs. The small transverse dimensions of a nanowire make this approach meaningful. Unique among the polymorphs are cubic symmetry diamond and hexagonal symmetry wurtzite structures. Electron diffraction studies conducted with Au as an internal reference unambiguously confi rm the existence of the hexagonal symmetry Si nanowires.Cohesive energy calculations suggest that the wurtzite polymorph is the least stable and the diamond polymorph is the most stable. Cohesive energies of intermediate polymorphs follow a linear trend with respect to their structural hexagonality. We identify the driving force in the polymorph formations as the growth kinetics. Fast longitudinal elongation during the growth freezes stacking mismatches and thus leads to a variety of Si polymorphs. The results are expected to shed new light on the importance of growth kinetics in nanomaterial syntheses and may open up ways to produce structures that are uncommon in bulk materials.

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“…1 Various methods have been developed to synthesize SiNWs, among which chemical vapor deposition ͑CVD͒ offers advantages such as excellent control over quantity, quality, diameter, and length of the nanowires. [1][2][3][4][5] Existing SiNW CVD growth, however, usually requires temperatures above 400°C, depending on the gas precursors and growth seed materials used.…”

Section: Low-temperature Synthesis Of Si Nanowires Using Multizone Chmentioning

confidence: 99%

Low-temperature synthesis of Si nanowires using multizone chemical vapor deposition methods

Wong

Zhao

et al. 2008

Applied Physics Letters

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With a multitemperature zone chemical vapor deposition reactor, silicon nanowires (SiNWs) were synthesized at temperatures below the Au–Si eutectic point, with Au nanoparticles as the growth seeds. Nanoparticle seeds with diameters less than 60nm were used to grow NWs at temperatures below 350°C. A strong dependence on the growth rate with the synthesis temperature and the size of the Au nanoparticle seeds was observed. With 10nm particles, SiNWs were reproducibly synthesized at a temperature of 290°C. We suggest that the governing role for the synthesis lies in the diffusion of Si feeding into the growth seeds.

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Influence of Pressure on Silicon Nanowire Growth Kinetics

Cited by 20 publications

References 20 publications

Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

Kinetically-induced hexagonality in chemically grown silicon nanowires

Low-temperature synthesis of Si nanowires using multizone chemical vapor deposition methods

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