Influence of Preparation Conditions on the Radiative Recombination in Amorphous Silicon

Engemann, D.; Fischer, R.

doi:10.1007/978-3-322-94774-1_180

Cited by 12 publications

(2 citation statements)

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“…With increasing tempeqature E , moves toward midgap. This results in a reduction in a,, which is most easily understood if this shift is assumed linear: , the observed factor of about los corresponds to y = 7.0 k (see (5)). The remaining factor of about 20 (= e3.0) is explained by another temperature shift, namely that of the dominant carriers from the band tail or impurity band towards more extended states with, presumably, higher 00".…”

Section: Dark Conductivitymentioning

confidence: 92%

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Photo and dark conductivity of doped amorphous silicon

Rehm

Fischer

Stuke

et al. 1977

Physica Status Solidi (b)

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The photo and dark conductivity of boron-and phosphorus-doped amorphous silicon is measured in the temperature range from 100 to 400 K, for various doping levels. Increasing doping generally decreases the activation energy of dark conductirity, down to 0.2 eV, and also decreases the a,,-value (extrapolation of dark conductivity for T -00). This lowering of a , is explained by a temperature shift of the Fermi level plus a change in the conduction mechanism. The activation energy of photoconductivity is also lowered, a t least by phosphorus doping, which is understood by an influence of doping on the tailing of the bands.Die Dunkel-und Photoleitung von Bor-und Phosphor-dotiertem amorphem Silizium wird fur verschiedene Dotierungen zwischen 100 und 400 K gemessen. Bei wachsender Dotierung sinkt die Aktivierungsenergie der Dunkelleitfahigkeit bis herab zu 0,2 eV: der u,-Wert (die Extrapolation der Dunkelleitfiihigkeit fur T + 30) nimmt jedoch ebenfalls ab. Diese Abnahme wird durch Verschiebung des Ferminiveaus erkliirt, verbunden mit einer Anderung des Leitungsmechanismus. Die Aktivierungsenergie der Photoleitung wbd ebenfalls gesenkt, zumindest im Fall der PhosphorDotierung, was mit einer Bwinflussung der BandauslSufer durch die Dotierung erklart wird.

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Section: Dark Conductivitymentioning

confidence: 92%

“…The most likely reason, why silane-type amorphous silicon can be doped, while evaporated silicon cannot, is the low density of states in the gap [2], which is also concluded from the fact that silane-type silicon is a sensitive photoconductor [3, 41, and exhibits efficient luminescence [5].…”

Section: Introductionmentioning

confidence: 99%

Photo and dark conductivity of doped amorphous silicon

Rehm

Fischer

Stuke

et al. 1977

Physica Status Solidi (b)

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Photoluminescence in amorphous silicon

Engemann¹,

Fischer²

1977

Physica Status Solidi (b)

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Photoluminescence of amorphous silicon is measured in the range from 77 K to room temperature. The temperature dependence of the three bands, of which the total luminescence spectrum consists, could be determined seperately. It is found that all three of them decrease a t high temperature with approximately the same activation energy of 0.13 eV. This decrease sets in a t different temperatures for the different bands. The three bands are interpreted as transitions within electron-hole pairs consisting of more or less deeply trapped carriers. The activated decrease a t high temperature is explained by thermally activated dissociation of these pairs. The electronhole pair concept also explains why photoconductivity decreases about twice as fast as luminescence when the substrate temperature is lowered.Die Photolumineszenz von amorphem Silizium wird zwischen 77 K und Zimmertemperatur gemessen. Die Temperaturabhiingigkeit der drei Banden, aus denen das gesamte Lumineszenzspektrum besteht, kann dabei getrennt bestimmt werden. Alle drei Banden nehmen bei hoher Temperatur mit ungefahr der gleichen Aktivierungsenergie von 0,13 eV ab. Dieser Abfall setzt fur die verschiedenen Banden bei verschiedenen Temperaturen ein. Die drei Banden werden als Ubergange innerhalb von Elektron-Loch-Paaren gedeutet, wobei die Elektronen oder Locher in verschieden tiefen Haftstellen sitzen. Der aktivierte Abfall der Lumineszenz bei hoher Temperatur wird durch thermisch aktivierte Dissoziation dieser Paare erkliirt. Dieses Konzept erkliirt auch, warum die Photoleitung doppelt so schnell abnimmt wie die Lumineszenz, wenn die Substrattemperatur erniedrigt wird.

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The spectroscopy of localized states

Street¹,

Biegelsen²

1984

Topics in Applied Physics

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Influence of Preparation Conditions on the Radiative Recombination in Amorphous Silicon

Cited by 12 publications

References 5 publications

Photo and dark conductivity of doped amorphous silicon

Photo and dark conductivity of doped amorphous silicon

Photoluminescence in amorphous silicon

The spectroscopy of localized states

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