The spectroscopy of localized states

Street, R. A.; Biegelsen, D. K.

doi:10.1007/3540128077_5

Cited by 25 publications

(3 citation statements)

References 111 publications

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“…As shown in Table I, this overestimation can be seen as the difference between the values of ~MO and 6~ Using the results of the molecular orbital calculation, the g tensors of dangling bond centers in a given cluster can be calculated. Provided that the molecular orbitals of all the states are confined in the cluster, the g tensor is given by 2~ <&01LJq~,> <d~ ILlkb0> g~i = genii -2X ~ E~ -E0 [5] where ge = 2.0023 is the g value of free electron, X the spinorbit coupling constant, L~ the orbital angular momentum operators, and i and j denote the x, y, or z axes in a rectangular coordinate, respectively. E0 and qb 0 are, respectively, the energy and the molecular orbital of the dangling bond state.…”

Section: Table I Characteristics Of the Dangling Bond Centers Obtaine...mentioning

confidence: 99%

Electron Spin Resonance Spectra of Silicon Dangling Bonds with Oxygen Back Bonds in Plasma‐Deposited Amorphous SiO x

Inokuma

Kurata

et al. 1995

J. Electrochem. Soc.

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Electron spin resonance (ESR) spectra in plasma-deposited amorphous SiOx films are investigated as a function of oxygen content, x. For x < 1.5, a broad resonance line around g = 2.005 dominates the ESR spectra. On the other hand, for x > 1.5, several narrow lines become pronounced over the broad line. The narrow lines are assigned to arise from silicon dangling bond centers with -Si~-~Si20, -Si~SiO2, and -Si~-O3 configurations. The anisotropic g factors for the -Si~--~Si20 and -Si~SiO2 centers are experimentally determined by means of a curve-fitting analysis. The g factors are also theoretically estimated on the basis of a molecular orbital calculation, and the values qualitatively agree with experimental ones. It is suggested that the broadening of the ESR line is reduced by the presence of an oxygen atom at the nearest-neighbor site of the trivalent silicon atom.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 68.181.221.5 Downloaded on 2015-04-01 to IP

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Section: Table I Characteristics Of the Dangling Bond Centers Obtaine...mentioning

confidence: 99%

Electron Spin Resonance Spectra of Silicon Dangling Bonds with Oxygen Back Bonds in Plasma‐Deposited Amorphous SiO x

Inokuma

Kurata

et al. 1995

J. Electrochem. Soc.

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“…Two sources for the physical origin of the relaxation process have been suggested: (1) local atomic readjustments that relieve large bond-angle distortions 47 frozen in during the formation of the amorphous phase; and (2) the annihilation of point defects remaining in the amorphous phase [44][45][46] . On the basis of spectroscopic studies 48 , the two point defects that have been proposed are dangling bonds 48 (threefold-coordinated atoms) and floating bonds 49 (fivefold-coordinated atoms); both are analogous to the two predominant point defects in crystals (vacancies and interstitials). Waddell et al 50 have shown that for self-implanted a-Si, the concentration of spectroscopic defects decreases during structural relaxation by about a factor of 2 from 2x10 19 cm -3 after annealing at 500 o C.…”

Section: Search For An Effect On Speg Of Amorphous Relaxationmentioning

confidence: 99%

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

Lü

Nygren

Aziz

1991

Journal of Applied Physics

152

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The effects of hydrostatic pressure on the solid-phase epitaxial growth (SPEG) rate v of intrinsic Ge(100) and undoped and doped Si(100) into their respective self-implanted amorphous phases are reported. Samples were annealed in a high-temperature, high-pressure diamond anvil cell. Cryogenically loaded fluid Ar, used as the pressure transmission medium, ensured a clean and hydrostatic environment. v was determined by in situ time-resolved visible (for Si) or infrared (for Ge) interferometry. v increased exponentially with pressure, characterized by a negative activation volume of −0.46Ω in Ge, where Ω is the atomic volume, and −0.28Ω in Si. The activation volume in Si is independent of both dopant concentration and dopant type. Structural relaxation of the amorphous phases has no significant effect on v. These and other results are inconsistent with all bulk point-defect mechanisms, but consistent with all interface point-defect mechanisms, proposed to date. A kinetic analysis of the Spaepen–Turnbull interfacial dangling bond mechanism is presented, assuming thermal generation of dangling bonds at ledges along the interface, independent migration of the dangling bonds along the ledges to reconstruct the network from the amorphous to the crystalline structure, and unimolecular annihilation kinetics at dangling bond ‘‘traps.’’ The model yields v = 2 sin(θ)vsnr exp[(ΔSf + ΔSm)/k] exp− [(ΔHf + ΔHm)/kT], where ΔSf and ΔHf are the standard entropy and enthalpy of formation of a pair of dangling bonds, ΔSm and ΔHm are the entropy and enthalpy of motion of a dangling bond at the interface, vs is the speed of sound, θ is the misorientation from {111}, and nr is the net number of hops made by a dangling bond before it is annihilated. It accounts semiquantitatively for the measured prefactor, orientation dependence, activation energy, and activation volume of v, and the pressure of a ‘‘free-energy catastrophe’’ beyond which the exponential pressure enhancement of SPEG cannot continue uninterrupted due to a vanishing barrier to dangling bond migration. The enhancement of v by doping can be accounted for by an increased number of charged dangling bonds, with no change in the number of neutrals, at the interface. Quantitative models for the doping dependence of v are critically reviewed. At low concentrations the data can be accounted for by either the fractional ionization or the generalized Fermi-level-shifting models; methods to further test these models are enumerated. Ion irradiation may affect v by altering the populatio

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“…[25,26] Figure 6.13 shows a cross section of an n-i-p photodiode made using microcrystalline silicon, µc-Si. The most common approach is to use homo-or hetero-junctions (i.e., junctions made from the same or different types of a-Si:H, respectively) incorporating p-and n-type doped layers of amorphous or microcrystalline (µc-Si:H) silicon.…”

Section: Ito/p-i-n Optical Image Sensorsmentioning

confidence: 99%

Photon Detectors

Nathan

2006

Mems

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The spectroscopy of localized states

Cited by 25 publications

References 111 publications

Electron Spin Resonance Spectra of Silicon Dangling Bonds with Oxygen Back Bonds in Plasma‐Deposited Amorphous SiO x

Electron Spin Resonance Spectra of Silicon Dangling Bonds with Oxygen Back Bonds in Plasma‐Deposited Amorphous SiO x

Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms

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