Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

Gao, Feng; Huang, Dayu; Li, J.P.; Lin, Yixuan; Kong, Meiying; Sun, Dawei; Li, J.M.; Lin, Lanying

doi:10.1016/s0022-0248(00)00856-3

Cited by 10 publications

(5 citation statements)

References 14 publications

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“…The average growth rate of n-Si microneedle decreases from 0.7 µm min −1 to 0.5 µm min −1 while PH 3 /Si 2 H 6 ratio increases from 1 to 10 ppt as shown in figure 7. The decreasing trend of Si growth rate with phosphorus doping was also observed by other researchers for Si growth by other methods like CVD, MBE [35,36]. This decrease may be attributed to two reasons.…”

Section: Resultssupporting

confidence: 78%

Fabrication of pn junction arrays with highly successful grown n-Si microneedles by using low temperature VLS method

Islam¹,

Hussain²,

Alkhateeb³

2021

J. Micromech. Microeng.

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Arrays of pn junctions have been fabricated with n-Si microneedles. In situ doping vapor–liquid–solid (VLS) growth has been carried out with p-Si substrate having metallic catalyst (Au) dots on its surface, using Si2H6 and PH3 for supplying Si and phosphorus to fabricate n-Si microneedles on the surface of p-Si substrate in vertical direction; thus, pn junctions have been fabricated at microneedle-substrate interface. These n-Si microneedles have been grown at the temperature of 680 °C, which is about 420 °C less than the temperature (at least 1100 °C) required by conventional diffusion method of doping. In this work, n-Si microneedles have been successfully fabricated with 100% yield, the highest success ever for n-type VLS growth in micro range. The position and size of these n-Si microneedles are controllable. These n-Si microneedles are highly conductive. Physical and electrical characteristics of n-Si microneedles have been investigated by varying Au dot size and the level of phosphorus doping. The properties of interface pn junction have been investigated and compared with standard diode characteristics and theoretical results. Highly conductive n-Si microneedle arrays, embedded with interface pn junctions, might be used for collecting and processing bio-signals, profiling temperature/pressure inside living cells and many other sensor applications.

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Section: Resultssupporting

confidence: 78%

Fabrication of pn junction arrays with highly successful grown n-Si microneedles by using low temperature VLS method

Islam¹,

Hussain²,

Alkhateeb³

2021

J. Micromech. Microeng.

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“…6,7) The surface segregation reduces the incorporation of As atoms into the film, and the segregated dopant atoms passivate the growth surface, thereby reducing the growth rate. [8][9][10][11][12][13][14][15][16][17][18][19][20] Similar phenomena were observed for P doping, although the power of the surface segregation is relatively low. However, we achieved the in-situ SEG of films with high As and P concentrations of 7:5 Â 10 19 and 7:3 Â 10 19 atoms/cm 3 with keeping a smooth surface, respectively.…”

Section: Introductionsupporting

confidence: 68%

Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping

Ikuta

Fujita²,

Iwamoto³

et al. 2008

jjap

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In-situ boron-doped silicon selective epitaxial growth (SEG) was investigated by comparison with in-situ As-doped SEG. The dopant concentration and growth rate of the film grown under low pressure are high for B-doped SEG, while they are high under atmospheric pressure (AP) for As-doped SEG. This difference is interpreted to be due to the strong effects of HCl etching under AP and surface segregation of As. By optimizing the growth rate and temperature, we have successfully grown epitaxial Si layers with high B concentrations of 2:3 Â 10 20 atoms/cm 3 .

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“…However, this growth rate of n-type probes is observed to decrease with the increase in the gas ratio of PH 3 to Si 2 H 6 . Some literature [8] report that the introduction of PH 3 to Si 2 H 6 during the epitaxial growth of Si by GS-MBE or ultrahighvacuum chemical vapour deposition (UHV-CVD) results in the reduction of the Si growth rate. P atoms bind H atoms on the growing surface and thus block the available reaction sites for the adsorption of further precursor Si 2 H 6 , thereby decreasing the growth rate.…”

Section: Resultsmentioning

confidence: 99%

Properties of a pn junction developed with a Si microprobe by vapour–liquid–solid growth using in situ doping

Islam

Kawashima

Sawada

et al. 2006

Semicond. Sci. Technol.

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This paper reports the development of a pn junction by growing n-type Si-microprobe arrays on a p-layered Si (1 1 1) substrate by Au-catalyzed vapour-liquid-solid (VLS) growth at 700 • C using the mixed gas of Si 2 H 6 and PH 3 . The diameter of the probes was selectively controlled in the range of 1-5 µm by patterning Au dots with the desired size and thickness, whereas the length is dictated by the growth conditions and time. The growth rate, impurity concentration and resistivity of these probes were observed to vary with the gas ratio of PH 3 to Si 2 H 6 . The pn junction formed at the interface of the n-probe and p-layer of the substrate exhibits standard diode characteristics with the built-in potential around 0.7 V and the reverse breakdown at about −11 V. This needle-like pn junction array may be applied as insertion electrodes, photodetectors, photosensitive emitter array devices, etc. Also low-temperature realization of a Si microprobe would be compatible to process this junction array with on-chip circuitry to develop smart chips for sensor applications.

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Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

Cited by 10 publications

References 14 publications

Fabrication of pn junction arrays with highly successful grown n-Si microneedles by using low temperature VLS method

Fabrication of pn junction arrays with highly successful grown n-Si microneedles by using low temperature VLS method

Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping

Properties of a pn junction developed with a Si microprobe by vapour–liquid–solid growth using in situ doping

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