Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy

Corre, Alain Le; Caulet, J.; Gauneau, M.; Loualiche, Slimane; L'Haridon, H.; Lecrosnier, D.; Roizes, A.; David, Jean‐Pierre

doi:10.1063/1.98566

Cited by 17 publications

(3 citation statements)

References 6 publications

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“…[1][2][3][4][5][6][7][8][9] Variations on the substitutional-interstitial diffusion mechanism proposed for other p-type dopants such as Zn, Cr, and Mn in GaAs and InP have been put forward to account for the data. [1][2][3][4][5][6][7][8][9] Variations on the substitutional-interstitial diffusion mechanism proposed for other p-type dopants such as Zn, Cr, and Mn in GaAs and InP have been put forward to account for the data.…”

Section: Introductionmentioning

confidence: 99%

Beryllium diffusion in GaInAs grown by molecular beam epitaxy

Scott

Wake

Spiller

et al. 1989

Journal of Applied Physics

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The diffusion of Be from buried Be-doped layers in GaInAs has been studied for temperatures between 600 and 700 °C. An interstitial-substitutional model is proposed for the diffusion mechanism, which is dependent on growth conditions and consistent with the data presented. Under growth conditions where Be transport is minimized GaInAs junction field-effect transistors have been produced with transconductances in excess of 200 mS mm−1 for a 1-μm gate length.

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Section: Introductionmentioning

confidence: 99%

Beryllium diffusion in GaInAs grown by molecular beam epitaxy

Scott

Wake

Spiller

et al. 1989

Journal of Applied Physics

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“…[25][26][27] Most technologies have been employed in order to remove native oxides and diminish the interaction between oxide and the semiconductor. [28][29][30] Further study the oxide contributions near the interface of SiN x =InAlAs could seek ways to improve the surface leakage current of SiN x =InAlAs structure and provide the basis for fabricating meas type InGaAs cells with the low dark current and high efficiencies. Here, the solid circles present the measured data, the solid and the dash lines are the simulated results and their four components, respectively.…”

Section: Resultsmentioning

confidence: 99%

Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology

Liu

Tang

et al. 2015

Jpn. J. Appl. Phys.

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Low surface leakage current is one of the prerequistites to reach the low leakage and high efficiencies of mesa type photodiodes. In this paper, we have studied the surface leakage of 2.6 µm mesa InGaAs p-i-n photodetectors by using two different passivation technologies: inductive coupled plasma chemical vapor deposition (ICPCVD) and plasma enhanced chemical vapor deposition (PECVD). It is found that the total leakage current of the detector with ICPCVD technology is significantly reduced compared to that with PECVD technology due to the decrease of the device's surface leakage current. A TCAD-based dark current model further reveals that the reduction of the surface leakage current at the low reverse voltage is about two orders of magnitude. As a result, ICPCVD is the promising deposition technology for SiN x passivation layer on mesa InGaAs photodetectors.

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“…Further, it has been shown that incorporation of O via formation of Be-O complexes could occur in the growth of Be-doped InGaAs, leading to an increased degree of compensation and enhanced impurity scattering. 6,7 In order to uncover the carrier relaxation dynamics in InGaAsP alloys, considerable efforts have been devoted to the optical and lifetime characterizations of bulk and quantum well type structures thus far. 4,6,[8][9][10][11][12][13][14] However, only very few have addressed p type InGaAsP 4,14 where compensation behaviors become of major concern.…”

Section: Introductionmentioning

confidence: 99%

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Zhang

Yuan

et al. 2017

AIP Advances

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We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.

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Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy

Cited by 17 publications

References 6 publications

Beryllium diffusion in GaInAs grown by molecular beam epitaxy

Beryllium diffusion in GaInAs grown by molecular beam epitaxy

Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

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