Beryllium diffusion in GaInAs grown by molecular beam epitaxy

Abstract

The diffusion of Be from buried Be-doped layers in GaInAs has been studied for temperatures between 600 and 700 °C. An interstitial-substitutional model is proposed for the diffusion mechanism, which is dependent on growth conditions and consistent with the data presented. Under growth conditions where Be transport is minimized GaInAs junction field-effect transistors have been produced with transconductances in excess of 200 mS mm−1 for a 1-μm gate length.

Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on Vergel1, Tadjine2, Notot3 et al. 2019Phys. Rev. Materials6140View full textAdd to dashboardCite

“…In both profiles, a smaller Be concentration than 7 × 10 18 cm −3 was measured in this region, whereas several peaks are visible at the interfaces and surface of the sample. This redistribution agrees with previous analyses of InGaAs and InGaAs/InP heterostructures upon annealing [13,25,26]. It increases with higher growth temperatures and results in a much higher doping level of the QW for the doped sample in comparison with the semidoped sample, consistent with the STS findings.…”

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

“…Although both epitaxial growth methods are similar, they contain basic different characteristics (epitaxial frame, precursors, growth parameters...). Besides, this diffusion length discrepancy could be also related to the effect of V/Ill flux ratio [8,9].…”

“…Thus, Eq. (7) becomes: K 2Be° +V 1 >M2Bes +1j 1 (8) where K is the reaction constant. Assuming local equilibrium between all involved species in Eq (8), the mass action law gives :…”

“…Be (and Zinc) diffusion were found based on Substitutional-Interstitial Diffusion mechanism (SID), and more precisely, on dissociative [1][2][3][4] or kick-out [5,6] models. Some authors even found that the second model has an advantage over the first [6,71. In contrast, investigations on p-type dopant diffusion in InP based epitaxial compounds, in particular Be in InGaAs, are still limited [8,9,10].…”

Be diffusion in InGaAs epitaxial layers during rapid thermal annealing: an effective diffusivity approach and a nonequilibrium model

“…Consequently, the understanding and the control of Be diffusion in epitaxial layers are needed Investigations on Zn and Be diffusion mechanisms in the binary and ternary InP based compounds are still limited [ 1,2] The beryllium diffusion mechanisms have been considered by some authors to be similar in GaAs and InGaAs [2] The published results are contradictory and, to our knowledge, the point defect equilibrium has never been clearly discussed [2-71. Moreover, a complete study including model and satisfactory fitting of experimental Be diffusion profiles in InGaAs epitaxial layers for a large scale of experimental conditions is still lacking…”