Influence of Oxygen Flow Rate on Sputter Deposition Rate and SEM Image of Copper Oxide Thin Films

Abstract

Abstract. Recently, copper oxide thin film has been studied because of its low cost, sensitivity to ambient condition and easiness to produce oxide thin film. It is one of the p-type semiconductor oxides materials that are suitable to be used as gas sensing material. In order to improve the sensitivity and to optimize the properties of copper oxide thin film, it is essential to study the physical structure of copper oxide. In current studies, copper oxide thin film has been deposited by RF magnetron sputtering at different substrate bias voltages and oxygen flow rates. The results reveal that the deposition rate decreased when the oxygen flow rate above 4 sccm. SEM image reveal that nanostructure copper oxide was also obtained when the oxygen flow rate was above 4 sccm. On the other hand, no significant effect on the substrate bias voltage toward the sputter deposition rate was observed.

Characterization of the Response of Magnetron Sputtered In2O3−x Sensors to NO2

“…Moreover, compared with other thick film traditional deposition processes, such as spin coating or drop casting and screen or ink jet printing [ 14 ], thin films obtained by magnetron sputtering methods are characterized by a much higher binding force and reproducibility [ 15 , 16 , 17 ], very good stability and they are suitable for the integration in miniaturized, low-power sensing devices based, for instance, on micro hot plates [ 18 ].…”

“…The deposition technique allows for a facile and fast manufacturing of the film, ensuring high control of its morphological characteristics and excellent adhesion to the substrate [ 13 , 15 , 16 ]. Deposition in the absence of oxygen guarantees the possibility to reduce the complexity of the sputtering procedure and to induce oxygen vacancies, which allows for obtaining thin films with electrical resistance values in the kilohms range [ 17 ] (several available MOX gas sensors show baseline resistance in the order of megaohms). This represents an ideal condition for the development of the front-end electronics and of the measurement setup, ensuring better performance in terms of stability and resolution and the use of cost-effective systems.…”