Influence of oxide thickness on ion-beam induced and thermal CoSi2 formation

Dehm, C.; Kasko, I.; Burte, Edmund P.; Gyulai, J.; Ryssel, H.

doi:10.1016/0169-4332(93)90178-e

Cited by 12 publications

(7 citation statements)

References 7 publications

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“…The diffusion may take place via defects in the SiO 2 layer. The interdiffusion of a metal through thin SiO 2 layers in the Si substrate has also been found for other metals such as Co, Ni, Pd, and Pt. − …”

Section: Resultsmentioning

confidence: 85%

A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO₂Model Catalysts

et al. 1998

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The thermal stability of wet-chemically prepared Cu/SiO2 model catalysts containing nanometer-sized Cu particles on silica model supports was studied upon heating in hydrogen and ultrahigh vacuum. The surface and interface phenomena that occur are determined by the metal−support interactions. Heating in hydrogen results in a reduction of the metal−support interaction and sintering occurs via Cu particle migration at 350 °C. Annealing in ultrahigh vacuum up to 620 °C does not result in sintering of the Cu particles. When a 5 nm thin SiO2 layer on top of a Si(100) substrate is used as SiO2 model support, interdiffusion of Cu into the Si substrate takes place. For a 400−500 nm thick SiO2 layer, Cu silicide islands are formed by reaction between Cu and SiO2, which can be regenerated by exposure to air at room temperature for several hours. The importance of the preparation procedure for the strength of the metal−support interaction is discussed. This paper shows that the use of model catalysts to study surface and interface phenomena is relevant for technical heterogeneous metal catalysis.

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Section: Resultsmentioning

confidence: 85%

A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO₂Model Catalysts

et al. 1998

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“…18 We are currently undertaking a more extensive study of the formation of nanoscale conductive features using this technique and optimized process conditions and feature sizes will be addressed in future work. We believe the nodules present on the surface to be cobalt silicide that has formed due to metal breakthrough of the masking oxide.…”

Section: Nanometer Scale Cobalt Silicide Line Generationmentioning

confidence: 99%

Nanoscale scanning tunneling microscope patterning of silicon dioxide thin films by catalyzed HF vapor etching

Whidden

Allgair

Jenkins-Gray

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report on the use of electron beam and scanning tunneling microscope ͑STM͒ patterns of ambient hydrocarbon residues on silicon dioxide as chemical initiators for the localized high-temperature HF vapor etching of oxide thin films. The treated films, when subjected to HF vapor etching at 115°C, are patterned in the areas that have been exposed to an electron beam in either a scanning electron microscope or STM. The technique has been combined with reactive ion etching or metallization to yield nanometer scale patterns and nanoscale metal silicide lines on silicon. Nonaqueous Bronsted bases have been shown to be retained on the oxide surface at temperatures of up to 125°C and to function as HF etch initiators. Such species show promise as monolayer resists for the patterning of silicon dioxide using the HF vapor etch process.

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“…The process relies on the effects of ion-beam mixing and radiation induced diffusion, which together are instrumental in activating the silicidation process across an interfacial oxide boundary. This oxide boundary, or impurity layer, as described by Wielunski [10] and subsequently others [3,5,8], impedes the silicide reaction of metal with the underlying silicon. Exposing such a layered structure to an ion fluence nullifies the effect of the oxide and silicidation occurs.…”

Section: Introductionmentioning

confidence: 99%

“…The literature is abundant with many novel methods for refining the manufacturing processes of silicide structures and improving their performance. For some time, the effects of ion-beam mixing on the growth of silicides have been explored [1][2][3][4][5][6][7][8][9][10]. A considerable amount of this work has focused on the characterization of the role of implantation on the formation of silicide phases in conjunction with subsequent or in situ heating.…”

Section: Introductionmentioning

confidence: 99%

Nanometer-scale silicide structures formed by focused ion-beam implantation

Alford

Mitan

Mayer

2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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We have demonstrated a new technique for direct patterning and formation of cobalt silicide structures using focused ion beam implantation. This mask-free-fabrication technique takes advantage of the influence on the kinetics of ionbeam mixing and properties of thin barrier oxides during silicide line formation. Silicide structures with dimensions of the order of 170 nm were produced on (100) silicon substrates. The process involves the ion implantation of 200 keV As ++ through a thin cobalt film on SiO 2 /Si structure. A selective reaction barrier at the Si/Co interface comprising of a thin (~2 nm) oxide (SiO 2 ), prevents unwanted reactions with silicon. Ion-beam mixing was instrumental in fracturing of the oxide layer; thereby, allowing the migration of metal atoms across the Si/Co boundary for the silicidation reaction to proceed during subsequent rapid thermal anneal treatments. Diffusion controlled reactions advanced rapidly in the implanted areas, requiring a two-step anneal sequence to inhibit reaction elsewhere. A threshold dose of 3 × 10 15 cm -2 was required for process initiation. Four-terminal resistance test structures were formed for electrical measurements. Resistivity obtained ranged on the order of 12 to 23 µΩ-cm. Application of this method can facilitate a wide variety of silicide structures.

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Influence of oxide thickness on ion-beam induced and thermal CoSi2 formation

Cited by 12 publications

References 7 publications

A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO₂Model Catalysts

A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO₂Model Catalysts

Nanoscale scanning tunneling microscope patterning of silicon dioxide thin films by catalyzed HF vapor etching

Nanometer-scale silicide structures formed by focused ion-beam implantation

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Influence of oxide thickness on ion-beam induced and thermal CoSi2 formation

Cited by 12 publications

References 7 publications

A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO2Model Catalysts

A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO2Model Catalysts

Nanoscale scanning tunneling microscope patterning of silicon dioxide thin films by catalyzed HF vapor etching

Nanometer-scale silicide structures formed by focused ion-beam implantation

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A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO₂Model Catalysts

A Surface Science Study of Model Catalysts. 2. Metal−Support Interactions in Cu/SiO₂Model Catalysts