Influence of order-domain size on the optical gain of AlGaInP laser structures

Geng, C.; Moritz, Andreas; Heppel, S.; Mühe, A.; Kuhn, J.; Ernst, P.; Schweizer, H.; Phillipp, F.; Hangleiter, A.; Scholz, F.

doi:10.1016/s0022-0248(96)00544-1

Cited by 10 publications

(4 citation statements)

References 20 publications

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“…Details of the growth procedure have been described in Ref. 15. Referring to the probed volume of ordered ͑GaIn͒P the samples can be divided into two classes.…”

Section: Methodsmentioning

confidence: 99%

Intrinsic quantum dots in partially ordered bulk (GaIn)P

et al. 2000

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We present a photoluminescence study with 500 nm lateral resolution on partially ordered bulk ͑GaIn͒P alloys at lattice temperatures 3-60 K, external magnetic fields 0-12 T, and excitation power 0.1-100 W. In the known ordering-induced low energy emission band we resolve narrow optical transition lines with 0.3-1.0 meV width. They show no thermal broadening, a diamagnetic shift with pronounced anisotropy, and biexcitonic states. We demonstrate that the transitions are connected with intrinsic quasi-zero-dimensional electronhole confinement formed at the antiphase-boundaries in the crystal.

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“…Details of the growth procedure have been described in Ref. 15. Referring to the probed volume of ordered ͑GaIn͒P the samples can be divided into two classes.…”

Section: Methodsmentioning

confidence: 99%

Intrinsic quantum dots in partially ordered bulk (GaIn)P

et al. 2000

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“…Although most optoelectronic devices are fabricated from rather disordered material [1,2], ordered GaInP still has the potential of achieving superior laser diodes [3,4]. An ideal ordered GaInP crystal would consist of a single sequence of Ga-rich and In-rich monolayers oriented along a [111] B direction, characterized by a certain order parameter η [5].…”

Section: Introductionmentioning

confidence: 99%

“…Domains may extend from about 5 to 500 nm and more in lateral width [4,8,9]. In dark-field transmission electron micrographs (DF-TEM), domain boundaries are represented by dark lines, which sometimes appear sharp, but are more usually diffuse and up to 50 nm thick.…”

Section: Introductionmentioning

confidence: 99%

Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopy

Hahn

Geng

Ernst

et al. 1997

Superlattices and Microstructures

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CuPt B -type ordered GaInP, lattice matched to GaAs, has been grown by metal organic vapor phase epitaxy. Ordered domains and their boundaries are investigated by dark-field transmission electron microscopy. By means of stereo images, we are able to show that domain boundaries are microscopically thin. The fact that they generally appear as broad dark lines in dark-field images is due to the projection onto the image plane and does not mean that there is a disordered alloy surrounding ordered domains. This is in agreement with photoluminescence excitation spectra of ordered samples which do not show any sign of a disordered phase.

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“…In ordered material domains with different degrees of ordering coexist with a size distribution that depends on the growth conditions and substrate misorientation [65]. The boundaries of these domains break the translational crystal symmetry and give rise to special features in the photoluminescence of ordered material.…”

Section: Orderingmentioning

confidence: 99%

Epitaxy of High-Power Diode Laser Structures

Weyers

Bhattacharya

Bugge

et al.

Topics in Applied Physics

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Abstract. Excellent semiconductor-material quality is an essential prerequisite for the fabrication of high-power diode lasers and laser bars. This review discusses issues in the epitaxial growth of semiconductor materials and layer sequences that form the basis for diode lasers. First, an overview of the material systems used for diode lasers with emission wavelengths extending from the far-infrared to the blue range of the spectrum is presented. The following sections then concentrate on materials that have, until now, been used for high-power diode lasers: the GaAs-based, and to a lesser extent also the InP-based members of the III-V family (Al, Ga, In)(As, P). Different growth techniques are described, with stress on the two modern methods -Molecular-Beam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) -that are currently used for the growth of diode-laser structures. An attempt is made to compare the relative strengths and weaknesses of these epitaxial growth techniques.The issues of purity, ordering (observed for example in GaInP), phase separation (occurring for certain compositions of GaInAsP) and p-and n-type doping for the constituent III-V materials found in high-power diode lasers are discussed in detail. The sequential growth of layers of controlled thicknesses, composition and doping profiles to build up the desired heterostructures requires careful optimization of the growth processes, especially at the heterointerfaces. While most of the layers within the heterostructure are lattice-matched to the underlying substrate, the active, light-emitting layer usually consists of one or more strained quantum wells (QWs). The advantages of such strained layers along with the corresponding implications from the growth viewpoint are highlighted. Finally, an overview of the different material combinations used and the state-of-the-art for 600-1060 nm emitting GaAs-based diode lasers is presented.The first reports on semiconductor-diode lasers [1] date back to 1962. Since then these devices have been realized over a wide range of emission wavelengths in a variety of material systems. Since the first demonstration of the semiconductor laser, threshold-current densities have fallen by more than three orders of magnitude, due to various breakthroughs made possible primarily by advancements in crystal-growth technologies. Improvements in Liquid-Phase Epitaxy (LPE) in the early 1970s enabled the realization of the Double Heterostructure (DH) concept and Continuous-Wave (CW) operation of GaAs/AlGaAs lasers, while progress in growth technologies like MolecularBeam Epitaxy (MBE) and Metalorganic Vapor-Phase Epitaxy (MOVPE) were responsible for the development of quantum-well lasers, which are the basis of most high-power diode lasers today. This review describes and compares the different epitaxial growth methods used to fabricate diode lasers in various material systems and examines important growth-related issues such as doping, ordering and homogeneity that are essential for the successful fabrication of ...

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Influence of order-domain size on the optical gain of AlGaInP laser structures

Cited by 10 publications

References 20 publications

Intrinsic quantum dots in partially ordered bulk (GaIn)P

Intrinsic quantum dots in partially ordered bulk (GaIn)P

Investigations on domain boundaries in ordered GaInP using stereo transmission electron microscopy

Epitaxy of High-Power Diode Laser Structures

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