2012
DOI: 10.1016/j.proeng.2012.02.027
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Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE

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Cited by 6 publications
(4 citation statements)
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“…The angle varies with the growth technique and the presence of dopant impurities. The affect of the offcut angle of 4H-SiC on the growth of InN has also been reported by Jantawongrit et al 27) The offcut angle corresponds to the density of steps and is an important parameter for crystal growth. Our results suggest the importance of the step edge and the kinetics, which is consistent with their experimental results.…”
Section: Discussionsupporting
confidence: 56%
“…The angle varies with the growth technique and the presence of dopant impurities. The affect of the offcut angle of 4H-SiC on the growth of InN has also been reported by Jantawongrit et al 27) The offcut angle corresponds to the density of steps and is an important parameter for crystal growth. Our results suggest the importance of the step edge and the kinetics, which is consistent with their experimental results.…”
Section: Discussionsupporting
confidence: 56%
“…By adjusting the off-cut angle and increasing the step density, it is possible to limit the undesirable nucleation of ZnO on terraces that causes the formation of grained films. Eventually, this opens the possibility of enhancing the probability of adatom incorporation at step edges and facilitates step-flow growth [ 28 , 29 ]. Therefore, one can anticipate an increase in growth rate with the increasing off-cut angle and improvement of the structural quality of the films.…”
Section: Resultsmentioning
confidence: 99%
“…Hence, a possible solution to diminish the problem of dislocation generation due to lattice mismatch is using a vicinal surface of misoriented SiC substrates [ 27 ]. Earlier, it was demonstrated that this approach enables epilayer growth via the step flow mechanism [ 28 , 29 ], which limits the generation of threading dislocations [ 30 ]. This is due to a higher step surface density of the off-cut angle substrates, which improves the nucleation of thin films.…”
Section: Introductionmentioning
confidence: 99%
“…The SiC grown by using molecular beam epitaxy has high-quality SiC film layers; however, it has a lower film-forming rate and incurs a greater equipment cost [3]. The evaporation method shows the advantages of a higher deposition rate and purity [4], however, the quality of the film layer prepared is poor and more expensive equipment is required. The magnetron sputtering method has been widely used to prepare thin-film materials such as various metal, dielectric, and semiconductor thin-films [5].…”
Section: Introductionmentioning
confidence: 99%