Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE

Jantawongrit, P.; Sanorpim, Sakuntam; Yaguchi, Hiroyuki; Orihara, M.; Limsuwan, Pichet

doi:10.1016/j.proeng.2012.02.027

Cited by 6 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The angle varies with the growth technique and the presence of dopant impurities. The affect of the offcut angle of 4H-SiC on the growth of InN has also been reported by Jantawongrit et al 27) The offcut angle corresponds to the density of steps and is an important parameter for crystal growth. Our results suggest the importance of the step edge and the kinetics, which is consistent with their experimental results.…”

Section: Discussionsupporting

confidence: 56%

First-principles simulation of the chemical reactions in GaN growth from Ga₂O

Yamamoto

Hamada

2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

First-principles calculation has been used to analyze the chemical reaction path in GaN epitaxial crystallization. The intrinsic reaction coordinates (IRC) have been searched for and the reaction path from Ga2O, which is a raw material of GaN, has been clarified. Ga2O is reacted with NH3 to form GaN, H2O, and H2. There is no residual solid product in the vapor process apart from GaN and the deposition on the chamber wall can be reduced. Thus, long-time continuous crystal growth can be executed. This is an advantage for producing a freestanding GaN substrate and reduces production costs. We have found that the chemical reactions proceed to GaNH2 in the gas-phase reactions. We have also found that GaNH2 molecules are finally adsorbed on the GaN substrate. The reaction path obtained in this work was exothermic as a whole and did not include any fatally large activation barrier. It is suggested that production with this process can be stably continued.

show abstract

Section: Discussionsupporting

confidence: 56%

First-principles simulation of the chemical reactions in GaN growth from Ga₂O

Yamamoto

Hamada

2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…By adjusting the off-cut angle and increasing the step density, it is possible to limit the undesirable nucleation of ZnO on terraces that causes the formation of grained films. Eventually, this opens the possibility of enhancing the probability of adatom incorporation at step edges and facilitates step-flow growth [ 28 , 29 ]. Therefore, one can anticipate an increase in growth rate with the increasing off-cut angle and improvement of the structural quality of the films.…”

Section: Resultsmentioning

confidence: 99%

“…Hence, a possible solution to diminish the problem of dislocation generation due to lattice mismatch is using a vicinal surface of misoriented SiC substrates [ 27 ]. Earlier, it was demonstrated that this approach enables epilayer growth via the step flow mechanism [ 28 , 29 ], which limits the generation of threading dislocations [ 30 ]. This is due to a higher step surface density of the off-cut angle substrates, which improves the nucleation of thin films.…”

Section: Introductionmentioning

confidence: 99%

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

et al. 2021

View full text Add to dashboard Cite

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

show abstract

“…The SiC grown by using molecular beam epitaxy has high-quality SiC film layers; however, it has a lower film-forming rate and incurs a greater equipment cost [3]. The evaporation method shows the advantages of a higher deposition rate and purity [4], however, the quality of the film layer prepared is poor and more expensive equipment is required. The magnetron sputtering method has been widely used to prepare thin-film materials such as various metal, dielectric, and semiconductor thin-films [5].…”

Section: Introductionmentioning

confidence: 99%

The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

Zhao

et al. 2019

SSP

View full text Add to dashboard Cite

This study prepared an SiC thin film by using the ratio frequency magnetron sputtering method, investigated the effects of different sputtering powers on the SiC material and analysed the changes in crystal morphology and photoluminescence characteristics caused by changes in the growth conditions used. It was considered that there was 6H-SiC crystal morphologies in the SiC thin film under the experimental conditions prevailing in this study. The SiC morphologies with small grain sizes intermingled and therefore formed anSiC thin film. The analyses of the photoluminescence spectra and Scanning Electron Microscope indicated that the SiC thin film materials with preferable crystal compositions could be prepared under appropriate power inputs.

show abstract

Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE

Cited by 6 publications

References 9 publications

First-principles simulation of the chemical reactions in GaN growth from Ga₂O

First-principles simulation of the chemical reactions in GaN growth from Ga₂O

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

Contact Info

Product

Resources

About

Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE

Cited by 6 publications

References 9 publications

First-principles simulation of the chemical reactions in GaN growth from Ga2O

First-principles simulation of the chemical reactions in GaN growth from Ga2O

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers

Contact Info

Product

Resources

About

First-principles simulation of the chemical reactions in GaN growth from Ga₂O

First-principles simulation of the chemical reactions in GaN growth from Ga₂O