Abstract:First-principles calculation has been used to analyze the chemical reaction path in GaN epitaxial crystallization. The intrinsic reaction coordinates (IRC) have been searched for and the reaction path from Ga2O, which is a raw material of GaN, has been clarified. Ga2O is reacted with NH3 to form GaN, H2O, and H2. There is no residual solid product in the vapor process apart from GaN and the deposition on the chamber wall can be reduced. Thus, long-time continuous crystal growth can be executed. This is an adva… Show more
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