Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

Nitrogen (N) and fluorine (F) ions were sequentially implanted into the buried oxide (BOX) to improve the total dose radiation hardness of the BOX layer in silicon-oninsulator (SOI) materials. The radiation response of the BOX layers modified by the ion implantation was characterized by flat-band voltage shifts and trapped charge changes in the BOX, based on the capacitance-voltage (C-V) measurements on the polysilicon-BOX-semiconductor (PBS) structures fabricated on the SOI materials, before and after irradiation using Co-60 γ rays with various doses range from 0.7 to 1.7 Mrad(Si). The experimental results show that a considerably enhanced hardness for the BOX layer can be achieved by this co-implantation of nitrogen and fluorine on proper process conditions, and the radiation responses of the BOX layers are directly associated with the anneal times after nitrogen implantation. In particular, the rebound and fluctuation phenomena of the BOX radiation response were observed with increasing dose, according to the changes in the flat-band voltages, which cannot be explained in terms of the increase in radiation induced interface state density, and the related mechanisms were analyzed and discussed.

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The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation

Zheng

Jin

Zhang

et al. 2016

Sci. China Mater.

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Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

Zheng¹,

Liu²,

Yu³

et al. 2012

Chinese Phys. B

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Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI) materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage (C-V ) technique after irradiation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C-V data, secondary ion mass spectrometry (SIMS), and Fourier transform infrared (FTIR) spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.

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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

Abstract: Tang Hai-Ma(唐海马) a) , Zheng Zhong-Shan(郑中山) a) † , Zhang En-Xia(张恩霞) b) , Yu Fang(于芳) c) , Li Ning(李宁) c) , and Wang Ning-Juan(王宁娟) c)

Cited by 2 publications

References 20 publications

The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation

The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation

Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

Abstract: Tang Hai-Ma(唐海马) a) , Zheng Zhong-Shan(郑中山) a) † , Zhang En-Xia(张恩霞) b) , Yu Fang(于 芳) c) , Li Ning(李 宁) c) , and Wang Ning-Juan(王宁娟) c)

Cited by 2 publications

References 20 publications

The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation

The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation

Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

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Product

Resources

About

Abstract: Tang Hai-Ma(唐海马) a) , Zheng Zhong-Shan(郑中山) a) † , Zhang En-Xia(张恩霞) b) , Yu Fang(于芳) c) , Li Ning(李宁) c) , and Wang Ning-Juan(王宁娟) c)