Influence of MOVPE growth conditions and CCl4 addition on InP crystal shapes

Selective Growth of Semi‐insulating InP around Masked Nonplanar Structures Using Low‐Pressure Pulsed Metallorganic Epitaxy

“…In Ref. 2 Nordell and coauthors used a modified Wulff diagram to roughly describe the final growth shape on masked structures. In general the Wulff construction agrees with the crystal shape when growth is limited by surface kinetics but disagrees when surface migration is significant or when the supply of reactants is inhomogeneous.…”

“…If the lengths of the {111} confining planes are longer than the surface diffusion lengths of the indium reactants on these planes, a saturation in overshooting growth rate may occur if the gas-phase gradient is constant all over the structure. In reality the gas-phase concentration becomes higher with its position above the mesa 2,6 and the overshot rate will continue to increase.…”

“…Many researchers have made studies on this topic using different MOCVD growth techniques. [1][2][3][4][5][6][7] From the point of view of laser processing a low-growth temperature is highly preferred, since high temperature processing may accelerate the thermal diffusion of impurities in semiconductor materials or cause additional thermal damage to the growth surface. In addition, simple etching and growth techniques are required to simplify the laser fabrication.…”

“…Although the mesa structure is easy to realize with reactive ion etching (RIE) technique, the growth temperature for obtaining surface planarity is in the high range of 650-680ЊC. However they claimed that 2 the growth temperature can be reduced to 625ЊC by the addition of chlorine-containing compounds as growth materials. Planar growth surfaces with low growth temperatures in the range of 580-600ЊC were also achieved in Ref.…”

Growth mechanism on patterned surfaces and applications using metalorganic growth technologies

“…Improvements concerning selectivity and planarity in regrowth around ridges could be achieved by injecting CCl4 during the MOVPE growth process (9). Excellent surface morphology of MOVPE regrowth of GaInAsP has been achieved around circular ridges (diameter: 100 v m ) etched in InP heterostructures for circular DFB laser applications (10).…”