Influence of misfit dislocations on the surface morphology of Si1−xGex films

Abstract

The influence of misfit dislocations on the surface morphology of partially strain relaxed Si1−xGex films is studied by atomic force microscopy and transmission electron microscopy. Surface steps arising from the formation of single and multiple 60° dislocations are identified. The role of such steps in the development of a cross-hatch pattern in surface morphology is discussed.

Fabrication of high quality strained SiGe on Si substrate by RPCVD

“…Besides the bigger RMS value, a cross-hatch pattern was observed in the AFM image of sample B, where ridges and trenches extend in the <110> directions on the surface. It has been reported in the literature that the cross-hatch is caused by the relaxation of strain fields [25], which is consistent with the Raman result of sample B.…”

Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si∕Si0.8Ge0.2

“…The surface fine lines were probably related to the slip steps arising from the formation of dislocation pileups in the graded SiGe layer. [13][14][15] Examining the TEM images ͑Fig. 1͒ in detail, we can see that the dislocations tended to be arranged in dislocation pileups.…”

Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)]

“…1 Using atomic force microscopy ͑AFM͒ and cross-sectional transmission electron microscopy ͑TEM͒, we identified surface steps arising from the formation of single and multiple 60°d…”