Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)]

Lutz, M. A.; Feenstra, R. M.; LeGoues, F. K.; Mooney, P. M.; Chu, J. O.

doi:10.1063/1.115287

Cited by 29 publications

(38 citation statements)

References 3 publications

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“…It manifests itself in a diverse range of phenomena, such as formation of gradual surface undulations (cross-hatch patterns) arising from the surface mass transport driven by the strain fields of the misfit dislocations [2-4], elastic [5] and plastic [6] displacements of the surface by misfit dislocations, and dislocation nucleation at surfaceripple structures in continuous heteroepitaxial layers [7][8][9][10]. Alignment of the surface-ripple domains along dislocation lines was observed in Si 12x Ge x ͞Si heteroepitaxial systems and attributed to ripple-dislocation interactions mediated by strain [7,10].…”

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confidence: 99%

Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpita

et al. 1997

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Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpita

et al. 1997

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“…However, when we form global-strain-type s-Si by currently used gas-source methods such as gas-source molecular beam epitaxy (GS-MBE) and chemical vapor deposition (CVD), a crosshatch undulation pattern is generally formed on the surface with an undulation pitch of typically less than 1 m. 6) This surface undulation causes a nonuniform strain distribution 7) and variations in the physical properties and device performance on the surface. This is a serious issue to be solved for smaller and higher-density devices.…”

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confidence: 99%

Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy

Hanafusa

Hirose

Kasamatsu

et al. 2011

Appl. Phys. Express

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Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si 1Àx Ge x -layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si 1Àx Ge x buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample. # 2011 The Japan Society of Applied Physics E lectron and hole mobilities in Si are enhanced by the introduction of strain. Biaxial global-strain-type strained Si (s-Si) formed on a Si 1Àx Ge x strain-relief relaxed buffer has been intensively applied to high-electronmobility transistors such as modulation-doped field-effect and metal-oxide-semiconductor transistors. [1][2][3][4][5] However, when we form global-strain-type s-Si by currently used gas-source methods such as gas-source molecular beam epitaxy (GS-MBE) and chemical vapor deposition (CVD), a crosshatch undulation pattern is generally formed on the surface with an undulation pitch of typically less than 1 m.6) This surface undulation causes a nonuniform strain distribution 7) and variations in the physical properties and device performance on the surface. This is a serious issue to be solved for smaller and higher-density devices.Recently, we have proposed a stepwise quadrupleSi 1Àx Ge x -layer buffer (QL buffer) as a strain-relief relaxed buffer.8) A smoother s-Si surface has been obtained on the QL buffer by our proposed sputter epitaxy method, which uses a combination of ultrahigh-vacuum-compatible magnetron sputtering and an Ar/H 2 mixture working gas, than by GS-MBE. 9) Therefore, this s-Si surface formed by our sputter epitaxy method is expected to have a more uniform strain distribution.Raman spectroscopy is one of the useful techniques for evaluating the surface strain distribution; however, its conventional spatial resolution is limited to about 1 Â 1 m 2 due to the diffraction limit and it is difficult to evaluate the s-Si surface strain distribution with an undulation pitch of .1 m.To obtain a higher spatial resolution, we have applied a near-field and plasmon oscillation coupling method 10,11) and introduced a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system for simultaneous measurements of surface topography and the enhanced Raman shift spectrum for an s-Si surface. So far, there has been one report, using a similar AFM-TERS system, on strain variation at the nanometer scale within a 1.4 m crosshatch segment on the s-Si surface on a Si 1Àx Ge x graded buffer. 11)In this paper, using the AFM-TERS method, we first report the relationship between the surface roughness and the strain distribution, on the nanometer scale, of strained Si on the stepwise QL bu...

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“…The Si 1−x Ge x layer relaxed during deposition through the formation of dislocations that appear as a characteristic cross-hatch structure. 16,17 Nanometer-scale height variations that do not lead to tilting of the lattice have been observed at the surfaces of SiGe layers due to the stress dependence of SiGe growth rate. 28 A subsequent Si/SiGe heterostructure (top 91 nm Si 0.7 Ge 0.3 , 10 nm strained-Si QW, 300 nm Si 0.7 Ge 0.3 buffer) and a 5 nm Si cap layer were grown on the relaxed Si 1−x Ge x layers, as shown in Figure 1(a).…”

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“…15 A lateral variation of the structure of QWs is also observed in Si/SiGe QWs produced using other fabrication methods and in other semiconductor materials. The transfer of released elastically relaxed Si/SiGe heterostructures as nanomembranes onto new substrates occurs without distortion due to crystalline mosaic or other effects of plastic relaxation, 16,17 but is instead accompanied by distortion resulting from the transfer process. 18 The distribution and magnitude of stress within silicon quantum devices can intuitively be expected to depend strongly on the device geometry and on the distance between the electrodes and the quantum well layer.…”

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Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

et al. 2016

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Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

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Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)]

Cited by 29 publications

References 3 publications

Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpita

Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpita

Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

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