This chapter describes the structural, optical and electrical properties of TiO 2 layers grown on various substrates such as quartz, intrinsic silicon and both P and N types silicon. This chapter starts with a brief description of the deposition parameters. In particular, the influence of chromium content as well as the growth and mechanism conditions on the structure, morphology and optical proprieties (size of crystallites, mesh parameter, morphology, chemical composition, optical index, bandgap energy, reflectivity, etc.) of the final prepared films are described.Keywords X-ray diffraction (XRD) · X-ray photospectroscopy (XPS) · X-ray reflectometry · Fourier transform infra-red spectroscopy (FTIR) · Raman spectroscopy · Ellipsometry · UV-visible spectroscopy · Band gap energy
IntroductionThis chapter is dedicated to the study of the structural, optical and electrical properties of TiO 2 layers on a substrate (quartz, intrinsic silicon, P type silicon and N type silicon). A parametric study was undertaken in order to get a fine control of different films properties. Thus, the influence of deposition parameters (Cr doping, effect of deposition temperature, development time, power) was closely correlated with the microstructural and optical characteristics (size of crystallites, mesh parameter, morphology, chemical composition, optical index, bandgap energy, reflectivity, etc.). TiO 2 thin films doped with Cr were developed by co-deposition using magnetron sputtering process with two targets, the TiO 2 and the chromium ones. Index of purity are 99.995 and 99.99 % respectively for Cr and Titanium oxide. The applied power to the target, the pressure, flow and volumetric ratio of Ar and O 2 gases, as well as the possible polarization of the substrate were chosen based on previous work (see Table 3.1) [1].