2008
DOI: 10.2320/matertrans.mra2008114
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High Temperature Stability of Anatase Films Prepared by MOCVD

Abstract: Highly thermally stable anatase films were prepared by metal-organic chemical vapor deposition (MOCVD) using Ti(O-i-Pr) 2 (dpm) 2 as precursor. The effect of heat treatment on the microstructure, transmittance, optical band gap and refractive index of anatase films was investigated. Anatase films in a single phase were obtained at T sub (substrate temperature) < 723 K. By heat-treating the anatase film at 1273 K, no phase transformation was observed without changing the transmittance and optical band gap, wher… Show more

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Cited by 14 publications
(6 citation statements)
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“…Indeed sample 1 can be seen to be very strongly oriented along this plane (Table ). An explanation for this can be anatase low atom packing density in this plane, which causes higher electron mobility and, consequently, leads to favorable conditions for surface redox reactions and higher surface charge lifetimes.…”
Section: Discussionmentioning
confidence: 99%
“…Indeed sample 1 can be seen to be very strongly oriented along this plane (Table ). An explanation for this can be anatase low atom packing density in this plane, which causes higher electron mobility and, consequently, leads to favorable conditions for surface redox reactions and higher surface charge lifetimes.…”
Section: Discussionmentioning
confidence: 99%
“…This event has not been reported for annealed lms before. For example, Tu and Goto 36 reported an increase in the grain size with the increase in annealing temperature without any reduction at the crossover temperature. Won et al 37 deposited TiO 2 thin lms at the same temperature by the same technique, and precursor with slight deposition condition differences.…”
Section: Structure and Morphologymentioning
confidence: 99%
“…Bio-ceramic oxide films are not usually deposited at high deposition rate because precursor vapors and oxygen gas are easily reacted in the gas phase to form powders and premature reactions take place on CVD chamber walls. The deposition rates of oxide films by thermal CVD are commonly around a few μm/h [9]. Thermal CVD can be performed close to thermal equilibrium.…”
Section: Chemical Vapor Deposition (Cvd)mentioning
confidence: 99%