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In this study, the effect of nitrogen (N) doping and microstructural changes on the electrical and thermal properties of silicon carbide (SiC) were investigated. SiC powder was treated in a N 2 atmosphere at 1673, 1973 and 2273 K for 3 h and subsequently sintered by spark plasma sintering (SPS) at 2373 K for 300 s in a vacuum or in a N 2 atmosphere. The a-axis of the N 2 -treated SiC powders was almost constant, while the c-axis slightly decreased with an increase in the temperature of N 2 treatment. The relative density of the SiC powder sintered body decreased from 72% to 60% with an increase in the temperature of N 2 treatment. The increase in temperature of N 2 treatment caused a decrease in the thermal and electrical conductivities of the SiC. Upon N 2 treatment at 1673 K and sintering in a N 2 atmosphere, SiC exhibited a high electrical conductivity of 1.5 × 10 3 S m −1 at 1123 K. SiC exhibited n-type conduction, and the highest Seebeck coefficient was −310 μV K −1 at 1073 K.

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