Influence of Li implantation on the optical and electrical properties of ZnO film

Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

“…However, a free electron-acceptor peak at ∼3.227 eV in the photoluminescence (PL) spectrum appears in the Li-implanted films, which indicates that some Li ions act as shallow acceptors in ZnO. 44 The stable p-type conductivity in single-crystalline ZnO has been reported by co-implantation of Li and N via forming an acceptor defect complex, which suppresses the compensation of Li Zn by Li i and enhances the solubility of N. 45 However, interestingly, no shallow-type behaviour of isolated Li Zn has been observed in Li–N co-implanted polycrystalline bulk ZnO as mentioned by Mondal et al 46 Therefore, a comprehensive study on defect formation in ZnO NRs as a result of Li implantation is still unexplored to the best of our knowledge. An interaction between Li impurities and the intrinsic defects as well as its influence on the physical properties of ZnO NRs must be understood clearly for realization of p-type ZnO for its applications in devices.…”

“…Compared to other ion implantations, [36][37][38][39][40][41] few pieces of literature are available, which have focused on Li implantation in ZnO thin films. [42][43][44] In an attempt to make ZnO p-type, Nagar et al 44 have shown that Li implantation into ZnO thin films displays ntype conductivity even after employing annealing treatment due to the presence of donor defects. However, a free electronacceptor peak at B3.227 eV in the photoluminescence (PL) spectrum appears in the Li-implanted films, which indicates that some Li ions act as shallow acceptors in ZnO.…”

P-type ZnO films by phosphorus doping using plasma immersion ion-implantation technique

“…However, most of the methods used here are non-localized mechanisms which is not favorable for device fabrication Ion implantation technique is a suitable method to achieve localized doping. Researchers around the globe have been successful in achieving p-type ZnO films using ion implantation, but the reports are quite few [15][16][17][18] . Here, we have applied a plasma immersion ion implantation (PIII) technique to dope phosphorus in ZnO films and make it p-type, instead of the conventional ion implantation technique.…”