Influence of lattice distortion on phase transition properties of polycrystalline VO2 thin film

Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO2 Thin Film Fabricated by HiPIMS

“…According to previous studies, the MIT temperature of VO 2 thin film can be affected by a lattice distortion, and the transition temperature decreases with the difference between the interplanar spacing of the as-deposited thin film and standard rutile VO 2 [ 29 , 33 , 40 ]. To compare the lattice distortions before and after the phase transition process, the respective diffraction angles of standard VO 2 (R) (JCPDS 44-0253) were marked with red dashed lines.…”

“…Therein, the maximum resistance before the phase transition ( R 0 ), minimum resistance after the phase transition ( R 1 ), start temperature ( T start ), end temperature ( T end ), transition temperatures during cooling and heating ( T c , cooling and T c , heating ) could be obtained from the derivative curves. The relative resistance change ( ∆R ), transition temperature ( T MIT ), sharpness of the transition ( ∆T ) and hysteresis width ( ∆H ), were defined according to our previous study [ 33 ]. Phase transition characteristics of the as-deposited VO 2 thin films are listed in Table 2 .…”

“…In a previous study, we reported that polycrystalline VO 2 thin film with a resistance change of 4500 times, a hysteresis width of 6 °C, a sharpness of the transition 5.8 °C, and an MIT temperature of 54.5 °C was prepared successfully on quartz substrates by high-power impulse magnetron sputtering (HiPIMS). However, the electrical and optical properties of this polycrystalline VO 2 thin film deteriorated significantly with the decrease of the MIT temperature, and the resistance change was only 120 times when the phase transition temperature was reduced to 48.3 °C [ 33 , 34 ]. Meanwhile, we deduced that the better way to reduce T MIT with only a slight deterioration on phase transition properties was to fabricate VO 2 thin film with a high ordered crystalline orientation close to that of the epitaxial VO 2 thin film.…”

Substrate temperature effects on the structural, compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

“…Lin et al reported the influence of lattice distortion on the phase transition properties of polycrystalline VO 2 thin films and revealed that the smaller the difference in the interplanar spacing of the as‐deposited thin films and standard VO 2 (R), the lower the transition temperature. As in our case, only the film deposited at 800°C exhibits the SMT behavior as shown later in Figure B; hence, we checked the lattice distortion in this film only.…”

Reduced Transition Temperature in Al:ZnO/VO2 Based Multi-Layered Device for low Powered Smart Window Application

“…Further research into VO 2 showed that after reducing the dimension (thin film), the transition temperature in VO 2 can be tuned to be even closer to room temperature (RT), getting it as low as ~27 °C. The film's transition temperature can be tuned depending on the thickness, strain, stoichiometry, growth parameters and growth techniques of the films [2][3][4][5][6][7][8][9][10][11][12] . Furthermore, doping the films with high valence element such as W, Mo or negatively charged ions such as F would bring down the transition temperature close to RT with a doping percentage even as low as 6%.…”