Influence of Laser Pulse Duration in Single Event Upset Testing

Douin,; Pouget,; Darracq,; Lewis, Elfed; Fouillat,; Perdu,

doi:10.1109/radecs.2005.4365567

Cited by 10 publications

(12 citation statements)

References 15 publications

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“…In lieu of heavy ion testing, pulsed laser irradiation has grown as an evaluation technique, largely due to the work of several groups [37,38,[51][52][53]. While there have been several direct comparisons of pulsed laser data to heavy ion data, cf.…”

Section: Discussion and Summarymentioning

confidence: 99%

Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications

Pellish

LaBel

2010

2010 IEEE International Reliability Physics Symposium

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Abstract-Inclusion of commercial technologies in civil spaceflight applications is reality. These technologies enable higher performance, reduce power consumption, and ultimately yield better science. However, the benefits do not come without cost, and radiation-induced soft errors in advanced, sub-90 nm CMOS technologies present new challenges. These challenges include sensitivity to proton direct ionization, memory technology evaluation, as well as testing and evaluation complexity.

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Section: Discussion and Summarymentioning

confidence: 99%

Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications

Pellish

LaBel

2010

2010 IEEE International Reliability Physics Symposium

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“…Douin et al [16] reported the most complete research work in modeling at electrical level the effect of pulse duration on laser fault injection into a SRAM cell. They introduced two different electrical models: one for short laser pulses and the other for long laser pulses (the threshold between short and long pulses was around one nanosecond).…”

Section: Adaptation Of the Simulation Model To Picosecond Pulsesmentioning

confidence: 99%

Laser fault injection into SRAM cells: Picosecond versus nanosecond pulses

Lacruche

Borrel

Champeix

et al. 2015

2015 IEEE 21st International on-Line Testing Symposium (IOLTS)

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Abstract-Laser fault injection into SRAM cells is a widely used technique to perform fault attacks. In previous works, Roscian and Sarafianos studied the relations between the layout of the cell, its different laser-sensitive areas and their associated fault model using 50 ns duration laser pulses. In this paper, we report similar experiments carried out using shorter laser pulses (30 ps duration instead of 50 ns). Laser-sensitive areas that did not appear at 50 ns were observed. Additionally, these experiments confirmed the validity of the bit-set/bit-reset fault model over the bit-flip one. We also propose an upgrade of the simulation model they used to take into account laser pulses in the picosecond range. Finally, we performed additional laser fault injection experiments on the RAM memory of a microcontroller to validate the previous results.

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“…Previous efforts have simulated femtosecond laser interaction by means of a customization of the alpha particle interaction model of DESSIS, a predecessor of Sentaurus TCAD [39,31]. This approach reproduce the photoelectric absorption, but it is not possible to adapt the alpha particle model to reproduce the lateral geometric distribution of a focused light beam.…”

Section: Heavy Ion Models In Tcad Sentaurusmentioning

confidence: 99%

Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

Palomo

Fernández-Martínez

Mogollon

et al. 2010

Int J Numerical Modelling

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SUMMARYPulsed laser illumination constitutes an excellent tool to emulate the effects produced by the impact of highly energetic particles on electronic circuits. Numerical simulation techniques could be used to study these effects and to establish accurate relationships between the laser parameters and the particle characteristics. Unfortunately, although particle incidence can be accurately simulated, up to now, there not exist a simulation technique able to reproduce completely the effects in electronics produced by a femtosecond pulsed laser. In this paper, we explore the Synopsys Sentaurus TCAD ability to simulate the effects of pulsed laser illumination. Theoretical study of the physics of the laser-semiconductor interactions leads us to design a new simulation tool. Modifying the heavy ion generation rate included in Sentaurus TCAD, we can take into account all the theoretical predicted characteristics of femtosecond laser illumination, and reproduce the single event effects (SEE) found in experimental tests.

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Influence of Laser Pulse Duration in Single Event Upset Testing

Cited by 10 publications

References 15 publications

Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications

Practicality of evaluating soft errors in commercial sub-90 nm CMOS for space applications

Laser fault injection into SRAM cells: Picosecond versus nanosecond pulses

Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

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