“…7 , 8 , 9 , 10 , 11 , 12 In epitaxially grown BiFeO 3 thin films, the leakage mechanism is dominated by Poole -Frenkel (P-F) emission with symmetric electrode configuration, while a mechanism close to (P-F) emission in an asymmetric electrode configuration 4 . Various efforts like i) substitution of heterovalent and homovalent substitutions on both A and B site cations which effectively controls the anion vacancies, 5,[7][8][9][10][11] ii) modification of the electrode material interface 12 and iii) recently a superlattice structure of a single periodicity of BiFeO 3 with SrTiO 3 13 were thusly employed to reduce the leakage behavior of BiFeO 3 thin films. Doping cations like, La, 3…”